Physical origin of in-plane lattice spacing oscillations measured by reflection high-energy electron diffraction during epitaxial growth

J. D. Fuhr; P. Müller

doi:10.1103/physrevb.84.195429

Physical origin of in-plane lattice spacing oscillations measured by reflection high-energy electron diffraction during epitaxial growth

Physical Review B ◽

10.1103/physrevb.84.195429 ◽

2011 ◽

Vol 84 (19) ◽

Cited By ~ 2

Author(s):

J. D. Fuhr ◽

P. Müller

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Lattice Spacing ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Physical Origin ◽

Plane Lattice

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Comparison between ultraviolet-photoelectron spectroscopy and reflection high-energy electron diffraction intensity oscillations during Si epitaxial growth on Si(100)

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580731 ◽

1997 ◽

Vol 15 (3) ◽

pp. 911-914 ◽

Cited By ~ 2

Author(s):

Y. Enta ◽

H. Irimachi ◽

M. Suemitsu ◽

N. Miyamoto

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Photoelectron Spectroscopy ◽

High Energy ◽

Energy Electron ◽

Ultraviolet Photoelectron Spectroscopy ◽

High Energy Electron ◽

Diffraction Intensity

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Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxides

Physical Review Letters ◽

10.1103/physrevlett.65.2684 ◽

1990 ◽

Vol 65 (21) ◽

pp. 2684-2687 ◽

Cited By ~ 285

Author(s):

T. Terashima ◽

Y. Bando ◽

K. Iijima ◽

K. Yamamoto ◽

K. Hirata ◽

...

Keyword(s):

High Temperature ◽

Electron Diffraction ◽

Epitaxial Growth ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

High Temperature Superconducting ◽

Superconducting Oxides

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Intensity Oscillations in Reflection High Energy Electron Diffraction during Epitaxial Growth

Surface and Interface Characterization by Electron Optical Methods ◽

10.1007/978-1-4615-9537-3_11 ◽

1988 ◽

pp. 185-193 ◽

Cited By ~ 1

Author(s):

P. J. Dobson ◽

B. A. Joyce ◽

J. H. Neave ◽

J. Zhang

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Measurement of reflection high-energy electron diffraction oscillations during molecular-beam epitaxial growth of GaAs on a rotating substrate

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586241 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1784 ◽

Cited By ~ 6

Author(s):

G. W. Turner

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Surface reconstructions of Si(001) observed using reflection‐high‐ energy‐electron diffraction during molecular‐beam epitaxial growth from disilane

Applied Physics Letters ◽

10.1063/1.105694 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3419-3421 ◽

Cited By ~ 24

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Surface Reconstructions ◽

Molecular Beam Epitaxial Growth

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Observations on intensity oscillations in reflection high‐energy electron diffraction during epitaxial growth of Si(001) and Ge(001)

Applied Physics Letters ◽

10.1063/1.96662 ◽

1986 ◽

Vol 48 (14) ◽

pp. 931-933 ◽

Cited By ~ 96

Author(s):

J. Aarts ◽

W. M. Gerits ◽

P. K. Larsen

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Reflection high‐energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beams

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577758 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1846-1855 ◽

Cited By ~ 13

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beams ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Surface Reconstructions

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Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates

Applied Physics Letters ◽

10.1063/1.102878 ◽

1990 ◽

Vol 56 (25) ◽

pp. 2533-2535 ◽

Cited By ~ 16

Author(s):

M. Y. Yen ◽

T. W. Haas

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Atomic layer controlled doping by reflection high‐energy electron diffraction during epitaxial growth

Journal of Applied Physics ◽

10.1063/1.351036 ◽

1992 ◽

Vol 71 (6) ◽

pp. 2650-2654 ◽

Cited By ~ 1

Author(s):

Ziqiang Zhu ◽

Mitsuo Kawashima ◽

Takafumi Yao

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Controlled Doping

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Rheed Observation of Lattice Relaxation During Ge/Si(O01) Heteroepitaxy

MRS Proceedings ◽

10.1557/proc-148-323 ◽

1989 ◽

Vol 148 ◽

Cited By ~ 18

Author(s):

Kazushi Miki ◽

Kunihiro Sakamoto ◽

Tsunenori Sakamoto

Keyword(s):

Electron Diffraction ◽

Lattice Constant ◽

Growth Temperature ◽

Lattice Relaxation ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Plane Lattice

ABSTRACTWe report the dynamic RHEED (reflection high energy electron diffraction) observation during Ge/Si(001) heteroepitaxy at various growth temperatures. The RHEED intensityanalysis and the in-plane lattice constant analysis reveal a growth fashion and lattice relaxation. Both of them depend strongly on growth temperature.

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