scholarly journals Nanoscale phase separation in the iron chalcogenide superconductor K0.8Fe1.6Se2as seen via scanning nanofocused x-ray diffraction

2011 ◽  
Vol 84 (6) ◽  
Author(s):  
A. Ricci ◽  
N. Poccia ◽  
G. Campi ◽  
B. Joseph ◽  
G. Arrighetti ◽  
...  
2012 ◽  
Vol 86 (5) ◽  
Author(s):  
N. Lazarević ◽  
M. Abeykoon ◽  
P. W. Stephens ◽  
Hechang Lei ◽  
E. S. Bozin ◽  
...  

1995 ◽  
Vol 51 (18) ◽  
pp. 12747-12753 ◽  
Author(s):  
M. A. G. Aranda ◽  
D. C. Sinclair ◽  
J. P. Attfield ◽  
A. P. Mackenzie

2021 ◽  
Vol 6 (4) ◽  
pp. 40
Author(s):  
Gaetano Campi ◽  
Antonio Bianconi

Nanoscale phase separation (NPS), characterized by particular types of correlated disorders, plays an important role in the functionality of high-temperature superconductors (HTS). Our results show that multiscale heterogeneity is an essential ingredient of quantum functionality in complex materials. Here, the interactions developing between different structural units cause dynamical spatiotemporal conformations with correlated disorder; thus, visualizing conformational landscapes is fundamental for understanding the physical properties of complex matter and requires advanced methodologies based on high-precision X-ray measurements. We discuss the connections between the dynamical correlated disorder at nanoscale and the functionality in oxygen-doped perovskite superconducting materials.


Soft Matter ◽  
2021 ◽  
Author(s):  
Yoichi Takanishi

Herein, the local nano-structure in mixtures of cholesteric liquid crystals and a bent-core molecule was analyzed via the small-angle X-ray scattering.


RSC Advances ◽  
2019 ◽  
Vol 9 (20) ◽  
pp. 11151-11159 ◽  
Author(s):  
Frederike Lehmann ◽  
Alexandra Franz ◽  
Daniel M. Többens ◽  
Sergej Levcenco ◽  
Thomas Unold ◽  
...  

The phase diagram elucidates structural changes and phase separation effects, induced by halide substitution in hybrid perovskite MAPb(I,Br)3 solid solution.


2014 ◽  
Vol 1645 ◽  
Author(s):  
Romain VAUCHY ◽  
Renaud.C. BELIN ◽  
Anne-Charlotte ROBISSON ◽  
Fiqiri HODAJ

ABSTRACTUranium-plutonium mixed oxides incorporating high amounts of plutonium are considered for future nuclear reactors. For plutonium content higher than 20%, a phase separation occurs, depending on the temperature and on the oxygen stoichiometry. This phase separation phenomenon is still not precisely described, especially at high plutonium content. Here, using an original in situ fast X-ray diffraction device dedicated to radioactive materials, we evidenced a phase separation occurring during rapid cooling from 1773 K to room temperature at the rate of 0.05 and 2 K per second for a (U0.55Pu0.45)O2-x compound under a reducing atmosphere. The results show that the cooling rate does not impact the lattice parameters of the obtained phases at room temperature but their fraction. In addition to their obvious fundamental interest, these results are of utmost importance in the prospect of using uranium-plutonium mixed oxides with high plutonium content as nuclear fuels.


2008 ◽  
Vol 112 (26) ◽  
pp. 9617-9622 ◽  
Author(s):  
Hwo-Shuenn Sheu ◽  
U-Ser Jeng ◽  
Wei-Ju Shih ◽  
Ying-Huang Lai ◽  
Chiu-Hun Su ◽  
...  

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Lahav ◽  
M. Eizenberg ◽  
Y. Komem

ABSTRACTThe reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.


1997 ◽  
Vol 482 ◽  
Author(s):  
E. L. Piner ◽  
N. A. El-Masry ◽  
S. X. Liu ◽  
S. M. Bedair

AbstractInGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.


1997 ◽  
Vol 482 ◽  
Author(s):  
M. D. Mccluskey ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
D. P. Bour ◽  
C. Chua ◽  
...  

AbstractEvidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.


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