scholarly journals Spectral and temperature dependence of two-photon and free-carrier absorption in InSb

2010 ◽  
Vol 82 (23) ◽  
Author(s):  
Peter D. Olszak ◽  
Claudiu M. Cirloganu ◽  
Scott Webster ◽  
Lazaro A. Padilha ◽  
Shekhar Guha ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Two Photon ◽  
Carrier Absorption

Temperature- and wavelength-dependent two-photon and free-carrier absorption in GaAs, InP, GaInAs, and InAsP

2011 ◽  
Vol 109 (3) ◽  
pp. 033102 ◽  
Author(s):  
Srini Krishnamurthy ◽  
Zhi Gang Yu ◽  
Leonel P. Gonzalez ◽  
Shekhar Guha
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Two Photon ◽  
Carrier Absorption

Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals

2003 ◽  
Vol 82 (26) ◽  
pp. 4720-4722 ◽  
Author(s):  
Bhavtosh Bansal ◽  
V. K. Dixit ◽  
V. Venkataraman ◽  
H. L. Bhat
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Energy Gap ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

Nonlinear Laser Melting Of Indium Antimonide And Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
Michael P. Hasselbeck ◽  
H. S. Kwok
Keyword(s):  
Indium Antimonide ◽  
Laser Light ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Free Carriers ◽  
Two Photon ◽  
Avalanche Ionization ◽  
Carrier Absorption

ABSTRACTPulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.

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