scholarly journals Thickness dependence and the role of spin transfer torque in nonlinear giant magnetoresistance of permalloy dual spin valves

2010 ◽  
Vol 82 (22) ◽  
Author(s):  
N. Banerjee ◽  
A. Aziz ◽  
M. Ali ◽  
J. W. A. Robinson ◽  
B. J. Hickey ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Transfer Torque ◽  
Thickness Dependence ◽  
Spin Transfer ◽  
Spin Valves

Introduction of spin torques

2017 ◽  
Author(s):  
T. Kimura
Keyword(s):  
Angular Momentum ◽  
Giant Magnetoresistance ◽  
Spontaneous Magnetization ◽  
Magnetic Domain ◽  
Magnetic Multilayers ◽  
Transfer Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Angular Momentum ◽  
Spin Torques

This chapter discusses the spin-transfer effect, which is described as the transfer of the spin angular momentum between the conduction electrons and the magnetization of the ferromagnet that occurs due to the conservation of the spin angular momentum. L. Berger, who introduced the concept in 1984, considered the exchange interaction between the conduction electron and the localized magnetic moment, and predicted that a magnetic domain wall can be moved by flowing the spin current. The spin-transfer effect was brought into the limelight by the progress in microfabrication techniques and the discovery of the giant magnetoresistance effect in magnetic multilayers. Berger, at the same time, separately studied the spin-transfer torque in a system similar to Slonczewski’s magnetic multilayered system and predicted spontaneous magnetization precession.

Thermal spin-transfer torque driven by the spin-dependent Seebeck effect in metallic spin-valves

2015 ◽  
Vol 11 (7) ◽  
pp. 576-581 ◽  
Author(s):  
Gyung-Min Choi ◽  
Chul-Hyun Moon ◽  
Byoung-Chul Min ◽  
Kyung-Jin Lee ◽  
David G. Cahill
Keyword(s):  
Spin Transfer Torque ◽  
Seebeck Effect ◽  
Spin Transfer ◽  
Spin Valves

scholarly journals A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hyein Lim ◽  
Sora Ahn ◽  
Miryeon Kim ◽  
Seungjun Lee ◽  
Hyungsoon Shin
Keyword(s):  
Tunnel Junction ◽  
Giant Magnetoresistance ◽  
New Technology ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Mean Oscillation ◽  
Proposed Model ◽  
Level Model

Spin-torque oscillator (STO) is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR) STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ)-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

scholarly journals DATA STORAGE: REVIEW OF HEUSLER COMPOUNDS

SPIN ◽  
2012 ◽  
Vol 02 (04) ◽  
pp. 1230006 ◽  
Author(s):  
ZHAOQIANG BAI ◽  
LEI SHEN ◽  
GUCHANG HAN ◽  
YUAN PING FENG
Keyword(s):  
Data Storage ◽  
Giant Magnetoresistance ◽  
Functional Materials ◽  
Recent Decade ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Data ◽  
Heusler Compounds ◽  
Storage Devices ◽  
The Family

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

Spin Valves in Microelectronics. Review

2021 ◽  
Vol 26 (1) ◽  
pp. 7-29
Author(s):  
Iu.A. Iusipova ◽  
◽  
A.I. Popov ◽  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Random Access ◽  
Cmos Technology ◽  
Work Conditions ◽  
Spin Transfer ◽  
Boolean Logic ◽  
Spin Valves ◽  
Computing Systems ◽  
Technology Scaling

The base element of micromagnetic devices are the layered spin-valve structures. Small sizes, compatibility with the CMOS technology, scaling ability and various work conditions make the spin-valve structures a universal component of modern microelectronics. The purpose of present work is the analysis, systematization and generalization of the data of the work theoretical bases, experimental data and the application of spin valves. In the review, the hard disc drives, random-access magnetoresistive memory, the spin-transfer nano-oscillators, the magnetic biosensors, as well as various computing systems, operating on the principles of stochastic and deterministic logic, have been considered. The key theoretical works devoted to giant magnetoresistance and spin transfer have been used. The data on various types of the hard-disc readheads have been systematized, their architecture and parameters have been compared, and it has been shown how modern scientific research of nanomagnetic phenomena accelerates the growth rate of the recording density. The analysis of modern research devoted to magnetoresistive random access memory has been carried out. The problems of energy efficiency and increasing the degree of the integration for these devices have been discussed. The latest achievements in the field of materials, geometry and the properties of the spin-transfer nano-oscillators, as well as the problems and prospects for the development of this technology have been considered. The analysis of theoretical and experimental works, in which the spin-gate structures have been used to perform the logical operations of Boolean and non-Boolean logic, has been carried out. It has been shown how the probabilistic nature of the unstable switching of spin gates is used in the op-eration of the unconventional computing systems, namely, neuromorphic or Bayesian networks. The principles of operation of the spin valves as magnetic biosensors have been considered and the advantages of their application have been discussed.

Elaboration of Single Crystalline AU/NI80FE20/CU/NI80FE20/NIO(111) Spin Valves

2000 ◽  
Vol 619 ◽  
Author(s):  
C. Mocuta ◽  
A. Barbier ◽  
S. Lafaye ◽  
P. Bayle-Guillemaud
Keyword(s):  
Magnetic Properties ◽  
Giant Magnetoresistance ◽  
Magnetic Layer ◽  
Growth Conditions ◽  
Spin Valves ◽  
High Coercivity ◽  
Magnetic Exchange ◽  
Transmission Electron ◽  
Magnetic Exchange Coupling

ABSTRACTThe successful preparation of fully epitaxial spin-valves elaborated on NiO(111) single crystals is reported. The growth conditions of a smooth 2D permalloy (Py = Ni80Fe20) layer have been determined. A very strong magnetic exchange interaction is evidenced on the Py/NiO(111) interface. It strongly modifies the magnetic properties of Py that acquires high coercivity, leaving it as a hard magnetic material. The second Py layer has unchanged magnetic properties and plays the role of the sensing soft magnetic layer. A giant magnetoresistance (GMR) of 3.5% at room temperature was easily obtained without optimizing the thickness of the different layers. Complementarily energy-filtered (EF-) and high-resolution (HR-) transmission electron microscopy (TEM) were used to fully characterize the spin valves. Within the framework of magnetic exchange coupling, our results open the possibility to elaborate model spin valves in which the role of each interface can be investigated and controlled at the atomic level. The detrimental effect of an inter-diffusion at the Py/NiO interface is evidenced.

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