scholarly journals Correlation of the angular dependence of spin-transfer torque and giant magnetoresistance in the limit of diffusive transport in spin valves

2009 ◽  
Vol 79 (1) ◽  
Author(s):  
M. Gmitra ◽  
J. Barnaś
Keyword(s):  
Angular Dependence ◽  
Giant Magnetoresistance ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Valves ◽  
Diffusive Transport

Introduction of spin torques

2017 ◽  
Author(s):  
T. Kimura
Keyword(s):  
Angular Momentum ◽  
Giant Magnetoresistance ◽  
Spontaneous Magnetization ◽  
Magnetic Domain ◽  
Magnetic Multilayers ◽  
Transfer Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Angular Momentum ◽  
Spin Torques

This chapter discusses the spin-transfer effect, which is described as the transfer of the spin angular momentum between the conduction electrons and the magnetization of the ferromagnet that occurs due to the conservation of the spin angular momentum. L. Berger, who introduced the concept in 1984, considered the exchange interaction between the conduction electron and the localized magnetic moment, and predicted that a magnetic domain wall can be moved by flowing the spin current. The spin-transfer effect was brought into the limelight by the progress in microfabrication techniques and the discovery of the giant magnetoresistance effect in magnetic multilayers. Berger, at the same time, separately studied the spin-transfer torque in a system similar to Slonczewski’s magnetic multilayered system and predicted spontaneous magnetization precession.

Thermal spin-transfer torque driven by the spin-dependent Seebeck effect in metallic spin-valves

2015 ◽  
Vol 11 (7) ◽  
pp. 576-581 ◽  
Author(s):  
Gyung-Min Choi ◽  
Chul-Hyun Moon ◽  
Byoung-Chul Min ◽  
Kyung-Jin Lee ◽  
David G. Cahill
Keyword(s):  
Spin Transfer Torque ◽  
Seebeck Effect ◽  
Spin Transfer ◽  
Spin Valves

Angular dependence of giant magnetoresistance properties of exchange biased spin valves

1999 ◽  
Vol 85 (8) ◽  
pp. 5033-5035 ◽  
Author(s):  
Sining Mao ◽  
Martin Plumer ◽  
Anthony Mack ◽  
Zhijun Yang ◽  
Ed Murdock
Keyword(s):  
Angular Dependence ◽  
Giant Magnetoresistance ◽  
Spin Valves

scholarly journals A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hyein Lim ◽  
Sora Ahn ◽  
Miryeon Kim ◽  
Seungjun Lee ◽  
Hyungsoon Shin
Keyword(s):  
Tunnel Junction ◽  
Giant Magnetoresistance ◽  
New Technology ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Mean Oscillation ◽  
Proposed Model ◽  
Level Model

Spin-torque oscillator (STO) is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR) STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ)-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

scholarly journals Shaped angular dependence of the spin-transfer torque and microwave generation without magnetic field

2007 ◽  
Vol 3 (7) ◽  
pp. 492-497 ◽  
Author(s):  
O. Boulle ◽  
V. Cros ◽  
J. Grollier ◽  
L. G. Pereira ◽  
C. Deranlot ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Microwave Generation

scholarly journals Bias and angular dependence of spin-transfer torque in magnetic tunnel junctions

2009 ◽  
Vol 79 (22) ◽  
Author(s):  
C. Wang ◽  
Y.-T. Cui ◽  
J. Z. Sun ◽  
J. A. Katine ◽  
R. A. Buhrman ◽  
...  
Keyword(s):  
Angular Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer Torque ◽  
Spin Transfer

scholarly journals DATA STORAGE: REVIEW OF HEUSLER COMPOUNDS

SPIN ◽  
2012 ◽  
Vol 02 (04) ◽  
pp. 1230006 ◽  
Author(s):  
ZHAOQIANG BAI ◽  
LEI SHEN ◽  
GUCHANG HAN ◽  
YUAN PING FENG
Keyword(s):  
Data Storage ◽  
Giant Magnetoresistance ◽  
Functional Materials ◽  
Recent Decade ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Data ◽  
Heusler Compounds ◽  
Storage Devices ◽  
The Family

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

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