Dielectric and carrier transport properties of vanadium dioxide thin films across the phase transition utilizing gated capacitor devices

2010 ◽  
Vol 82 (20) ◽  
Author(s):  
Zheng Yang ◽  
Changhyun Ko ◽  
Viswanath Balakrishnan ◽  
Gokul Gopalakrishnan ◽  
Shriram Ramanathan
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transport Properties ◽  
Vanadium Dioxide ◽  
Carrier Transport ◽  
Vanadium Dioxide Thin Films ◽  
Carrier Transport Properties

scholarly journals Mg/W-codoped vanadium dioxide thin films with enhanced visible transmittance and low phase transition temperature

2015 ◽  
Vol 3 (26) ◽  
pp. 6771-6777 ◽  
Author(s):  
Ning Wang ◽  
Shiyu Liu ◽  
X. T. Zeng ◽  
Shlomo Magdassi ◽  
Yi Long
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Charge Carrier ◽  
Band Gap ◽  
Phase Transition Temperature ◽  
Vanadium Dioxide ◽  
Visible Transmittance ◽  
Vanadium Dioxide Thin Films

Mg2+ and W6+ cations were first codoped into the VO2 lattice, resulting in a widened photon band gap and h+/e− charge carrier accumulation. These effects enhanced the thermochromic performance with a high visible transmission (∼80%) and a low phase transition temperature (∼30 °C).

Vanadium Dioxide Thin Films for Thermo-Optical Switching Applications

2003 ◽  
Vol 785 ◽  
Author(s):  
Lijun Jiang ◽  
William N. Carr
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Dioxide ◽  
Optical Switching ◽  
Abrupt Change ◽  
Metal Layer ◽  
Heating And Cooling ◽  
Optical Switching Devices ◽  
Lift Off ◽  
Vanadium Dioxide Thin Films

ABSTRACTVanadium dioxide (VO2) thin films were fabricated by e-beam evaporation of vanadium thin films followed by thermal oxidation in oxygen ambient. The properties of the VO2 films were investigated for thermo-optical switching applications. Synthesized VO2 film displays a phase transition at 65 – 68 °C. It exhibits an abrupt change in optical reflectivity over the phase transition temperature range. Results for VO2 on a highly reflective metal layer are strongly dependent on the VO2 thickness. The optical switching has a major hysteresis of about 15 °C between the heating and cooling branches. The evolution of the surface morphology with the oxidation time was studied with a SEM. The VO2 film was patterned on microplatforms by metal lift-off technique. We conclude that the evaporation followed by oxidation is an effective method to produce active VO2 film for thermo-optical switching devices.

Multi-carrier transport properties in p-type ZnO thin films

2009 ◽  
Vol 149 (39-40) ◽  
pp. 1628-1632 ◽  
Author(s):  
H.B. Ye ◽  
J.F. Kong ◽  
W. Pan ◽  
W.Z. Shen ◽  
B. Wang
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Zno Thin Films ◽  
P Type ◽  
Carrier Transport Properties

Hole Transport in Self-Organized Oligosilane Thin Films with Highly Ordered Hopping Sites

2001 ◽  
Vol 707 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
A. Richter ◽  
M. Shimomura ◽  
A. Kaito ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Multilayered Structure ◽  
Hole Transport ◽  
Conjugated Molecules ◽  
Disordered Structures ◽  
Self Organized ◽  
Carrier Transport Properties

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

Effect of porous morphology on phase transition in vanadium dioxide thin films

2015 ◽  
Vol 33 (6) ◽  
pp. 061508 ◽  
Author(s):  
Hui Yan Xu ◽  
Yu Hong Huang ◽  
Jin Ping Li ◽  
Fei Ma ◽  
Ke Wei Xu
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Dioxide ◽  
Porous Morphology ◽  
Vanadium Dioxide Thin Films
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