Ferroelectric Schottky diode behavior from aSrRuO3-Pb(Zr0.2Ti0.8)O3-Tastructure

2010 ◽  
Vol 82 (8) ◽  
Author(s):  
Lucian Pintilie ◽  
Viorica Stancu ◽  
L. Trupina ◽  
Ioana Pintilie
Keyword(s):  
Schottky Diode ◽  
Diode Behavior

Photo-responsive Schottky Diode Behavior of a Donor-Acceptor Co-crystal with Violet Blue Light Emission

CrystEngComm ◽  
2021 ◽  
Author(s):  
Sanjay Kumar ◽  
Soumen Singha ◽  
Rajkumar Jana ◽  
RITUPARNA MONDAL ◽  
Partha Pratim Bag ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Property ◽  
Schottky Diode ◽  
Electronic Transport ◽  
Supramolecular Structure ◽  
Light Emission ◽  
Electronic Transport Property ◽  
Blue Light Emission ◽  
Donor Acceptor ◽  
Diode Behavior

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...

Synthesis of an electrically conductive square planar copper(ii) complex and its utilization in the fabrication of a photosensitive Schottky diode device and DFT study

2020 ◽  
Vol 44 (27) ◽  
pp. 11622-11630 ◽  
Author(s):  
Samim Khan ◽  
Soumi Halder ◽  
Arka Dey ◽  
Basudeb Dutta ◽  
Partha Pratim Ray ◽  
...  
Keyword(s):  
Charge Transport ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Chain Structure ◽  
Dft Study ◽  
Electrically Conductive ◽  
Π Interactions ◽  
Square Planar ◽  
Efficient Charge ◽  
Diode Behavior

A naphthalene based square planar copper(ii) complex shows significant C–H⋯π interactions to form a supramolecular chain structure. The complex shows efficient charge transport and reveals Schottky barrier diode behavior.

Abstract: Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior

1976 ◽  
Vol 13 (4) ◽  
pp. 873-873 ◽  
Author(s):  
E. H. Nicollian ◽  
B. Schwartz ◽  
D. J. Coleman ◽  
R. M. Ryder ◽  
J. R. Brews
Keyword(s):  
Oxide Layer ◽  
Schottky Diode ◽  
Thin Oxide Layer ◽  
Thin Oxide ◽  
Diode Behavior

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

2021 ◽  
Author(s):  
Hae In Yang ◽  
Daniel J. Coyle ◽  
Michelle Wurch ◽  
Prachi R. Yadav ◽  
Michael D. Valentin ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molybdenum Disulfide ◽  
Schottky Diode ◽  
Diode Behavior

scholarly journals Anthracene-Based Fluorophore and Its Re(I) Complexes: Investigation of Electrical Properties and Schottky Diode Behavior

ACS Omega ◽  
2020 ◽  
Vol 5 (45) ◽  
pp. 29465-29476
Author(s):  
Debopam Sinha ◽  
Sayantan Sil ◽  
Partha Pratim Ray ◽  
Kajal Krishna Rajak
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Diode Behavior

Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior

1976 ◽  
Vol 13 (5) ◽  
pp. 1047-1055 ◽  
Author(s):  
E. H. Nicollian ◽  
B. Schwartz ◽  
D. J. Coleman ◽  
R. M. Ryder ◽  
J. R. Brews
Keyword(s):  
Oxide Layer ◽  
Schottky Diode ◽  
Thin Oxide Layer ◽  
Thin Oxide ◽  
Diode Behavior

scholarly journals Enhanced Photosensitive Schottky Diode Behavior of Pyrazine over 2-Aminopyrimidine Ligand in Copper(II)-Phthalate MOFs: Experimental and Theoretical Rationalization

ACS Omega ◽  
2018 ◽  
Vol 3 (8) ◽  
pp. 9160-9171 ◽  
Author(s):  
Anowar Hossain ◽  
Arka Dey ◽  
Saikat Kumar Seth ◽  
Partha Pratim Ray ◽  
Pablo Ballester ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Diode Behavior

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

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