Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces
2009 ◽
Vol 24
(12)
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pp. 125008
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Keyword(s):
Abstract: Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior
1976 ◽
Vol 13
(4)
◽
pp. 873-873
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