scholarly journals Dominant spin relaxation mechanism in compound organic semiconductors

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
Supriyo Bandyopadhyay
Author(s):  
Franco V. A. Camargo ◽  
Soumen Ghosh ◽  
Sean A. Bourelle ◽  
Ravichandran Shivanna ◽  
Richard H. Friend ◽  
...  

2011 ◽  
Vol 143-144 ◽  
pp. 216-219
Author(s):  
Yu Wu

Time-resolved circularly polarized pump-probe spectroscopy is used to study the carrier density dependence of the electron spin polarization dynamics in AlGaAs/GaAs multi quantum wells at room temperature. Experimental results show that the spin relaxation time increases with the carrier density, which is in conformity with D'yakonov-Perel relaxation mechanism.


2018 ◽  
Vol 96 (3) ◽  
pp. 358-362 ◽  
Author(s):  
Iain McKenzie

The radicals formed by muonium (Mu) addition to ruthenocene at low temperature (4–200 K) have been characterized by transverse field muon spin rotation (TF-μSR) and avoided level crossing muon spin resonance (ALC-μSR) spectroscopy. The structures of the muoniated radicals have been identified by comparing the experimentally measured muon hyperfine coupling constants with values obtained from DFT calculations (UB3LYP/DGDZVP). Mu addition was observed at the ruthenium and at the cyclopentadiene (Cp) rings, both from the exterior and interior directions. Closer agreement between the DFT calculations and the experimental values are obtained if it is assumed the structures of the Mu adducts of the Cp rings are distorted due to interactions with neighbouring molecules. Changes in the ALC-μSR spectra with temperature indicated that the electron spin relaxation rate of the Cp adducts increases with temperature; however, the specific spin relaxation mechanism is unknown.


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