Rate-equation model of spin dynamics and polarized light emission for spin light-emitting diodes

2010 ◽  
Vol 81 (11) ◽  
Author(s):  
Oliver Brandt ◽  
Manfred Ramsteiner ◽  
Timur Flissikowski ◽  
Jens Herfort ◽  
Holger T. Grahn
Keyword(s):  
Rate Equation ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Spin Dynamics ◽  
Polarized Light ◽  
Equation Model ◽  
Light Emitting ◽  
Rate Equation Model

scholarly journals Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates

2019 ◽  
Vol 9 (19) ◽  
pp. 4160 ◽  
Author(s):  
Ryu ◽  
Ryu ◽  
Onwukaeme
Keyword(s):  
Quantum Well ◽  
Rate Equation ◽  
Equation Model ◽  
Efficiency Droop ◽  
Internal Electric Field ◽  
Active Volume ◽  
Light Emitting ◽  
Rate Equation Model ◽  
Sapphire Substrates ◽  
The Difference

We compared the efficiency droop of InGaN multiple-quantum-well (MQW) blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates and analyzed the efficiency droop characteristics using the rate equation model with reduced effective active volume. The efficiency droop of the LED sample on silicon was observed to be reduced considerably compared with that of the identical LED sample on sapphire substrates. When the measured external quantum efficiency was fitted with the rate equation model, the effective active volume of the MQW on silicon was found to be ~1.45 times larger than that of the MQW on sapphire. The lower efficiency droop in the LED on silicon could be attributed to its larger effective active volume compared with the LED on sapphire. The simulation results showed that the effective active volume decreased as the internal electric fields increased, as a result of the reduced overlap of the electron and hole distribution inside the quantum well and the inhomogeneous carrier distribution in the MQWs. The difference in the internal electric field of the MQW between the LED on silicon and sapphire could be a major reason for the difference in the effective active volume, and consequently, the efficiency droop.

scholarly journals Emission pattern control and polarized light emission through patterned graded-refractive-index coatings on GaInN light-emitting diodes

2012 ◽  
Vol 20 (15) ◽  
pp. 16677 ◽  
Author(s):  
Ming Ma ◽  
Ahmed N. Noemaun ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
Gi Bum Kim ◽  
...  
Keyword(s):  
Refractive Index ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Polarized Light ◽  
Emission Pattern ◽  
Light Emitting ◽  
Pattern Control

First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes

2006 ◽  
Vol 45 (No. 34) ◽  
pp. L904-L906 ◽  
Author(s):  
Hisashi Masui ◽  
Troy J. Baker ◽  
Rajat Sharma ◽  
P. Morgan Pattison ◽  
Michael Iza ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Polarized Light ◽  
Moment Analysis ◽  
Light Emitting ◽  
First Moment

27‐4: Organic Light‐Emitting Diodes with Directional Polarized Light Emission

2021 ◽  
Vol 52 (1) ◽  
pp. 345-348
Author(s):  
Xiangyu Fu ◽  
Liping Zhu ◽  
Yash Mehta ◽  
Yi-An Chen ◽  
Lei Lei ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Polarized Light ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light

scholarly journals Directional Polarized Light Emission from Thin‐Film Light‐Emitting Diodes

2021 ◽  
pp. 2006801
Author(s):  
Xiangyu Fu ◽  
Yash Mehta ◽  
Yi‐An Chen ◽  
Lei Lei ◽  
Liping Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Polarized Light ◽  
Light Emitting

Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

2012 ◽  
Vol 101 (6) ◽  
pp. 061103 ◽  
Author(s):  
Ming Ma ◽  
David S. Meyaard ◽  
Qifeng Shan ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Polarized Light ◽  
Aluminum Wire ◽  
Wire Grid ◽  
Light Emitting
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