Boron diffusion in extrinsically doped crystalline silicon

2010 ◽  
Vol 81 (4) ◽  
Author(s):  
D. De Salvador ◽  
E. Napolitani ◽  
G. Bisognin ◽  
M. Pesce ◽  
A. Carnera ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Boron Diffusion

Process-Induced Diffusion Phenomena in Advanced CMOS Technologies

2006 ◽  
Vol 258-260 ◽  
pp. 510-521 ◽  
Author(s):  
Peter Pichler ◽  
Alexander Burenkov ◽  
Wilfried Lerch ◽  
Jürgen Lorenz ◽  
Silke Paul ◽  
...  
Keyword(s):  
Process Simulation ◽  
Thermal Processing ◽  
Crystalline Silicon ◽  
Rapid Thermal Processing ◽  
Correct Prediction ◽  
Boron Diffusion ◽  
Dopant Distribution ◽  
Device Design ◽  
Tight Control ◽  
Diffusion Phenomena

The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.

A Comparison of Low Energy BF2 Implantation in Si and Ge Preamorphized Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
Gary A. Ruggles ◽  
Shin-Nam Hong ◽  
Jimmie J. Wortman ◽  
Mehmet Ozturk ◽  
Edward R. Myers ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Low Energy ◽  
Electrical Activation ◽  
Silicon Substrates ◽  
Boron Diffusion ◽  
Junction Depth ◽  
Rapid Thermal Anneal ◽  
Boron Segregation

ABSTRACTLow energy (6 keV) BF2 implantation was carried out using single crystal, Ge-preamorphized, and Si-preamorphized silicon substrates. Implanted substrates were rapid thermal annealed at temperatures from 600°C to 1050'C and boron channeling, diffusion, and activation were studied. Ge and Si preamorphization energies were chosen to produce nearly identical amorphous layer depths as determined by TEM micrographs (approximately 40 nm in both cases). Boron segregation to the end-of-range damage region was observed for 6 keV BF2 implantation into crystalline silicon, although none was detected in preamorphized substrates. Junction depths as shallow as 50 nm were obtained. In this ultra-low energy regime for ion implantation, boron diffusion was found to be as important as boron channeling in determining the junction depth, and thus, preamorphization does not result in a significant reduction in junction depth. However, the formation of junctions shallower than 100 rmu appears to require RTA temperatures below 1000°C which can lead to incomplete activation unless the substrate has been preamorphized. In the case of preamorphized samples, Hall measurements revealed that nearly complete electrical activation can be obtained for preamorphized samples after a 10 second rapid thermal anneal at temperatures as low as 600°C.

Boron Diffusion in Polycrystalline Silicon

1986 ◽  
Vol 76 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Robert W. Dutton ◽  
Steven W. Novak
Keyword(s):  
Grain Size ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Crystalline Silicon ◽  
Unit Area ◽  
Grain Boundary Diffusion ◽  
Boron Diffusion

ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.

Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

2004 ◽  
Vol 810 ◽  
Author(s):  
Lilya Ihaddadene-Lecoq ◽  
Jerome Marcon ◽  
Kaouther Ketata
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Boron Difluoride ◽  
Secondary Ion ◽  
Trap Interstitial

ABSTRACTWe have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon

2003 ◽  
Vol 340-342 ◽  
pp. 777-779
Author(s):  
L. Ihaddadene-Le Coq ◽  
J. Marcon ◽  
A. Dush-Nicolini ◽  
K. Masmoudi ◽  
K. Ketata
Keyword(s):  
Crystalline Silicon ◽  
Low Energy ◽  
Boron Diffusion

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
W. Windl ◽  
M. M. Bunea ◽  
R. Stumpf ◽  
S. T. Dunham ◽  
M. P. Masquelier
Keyword(s):  
Fermi Level ◽  
Ab Initio ◽  
Diffusion Length ◽  
Crystalline Silicon ◽  
Boron Diffusion ◽  
Elastic Band ◽  
Pseudopotential Calculations ◽  
Band Method ◽  
Diffusion Paths ◽  
And Diffusion

ABSTRACTIn this work we investigate boron diffusion as a function of the Fermi-level position in crystalline silicon using ab-initio calculations and the nudged elastic band method to optimize diffusion paths. Based on our results, a new mechanism for B diffusion mediated by Si self-interstitials is proposed. We find a two-step diffusion process for all Fermi-level positions, which suggests a kick-out with a directly following kick-in process without extensive B diffusion on interstitial sites in-between. Our activation energy of 3.47 – 3.75 eV and diffusion-length exponent of -0.55 to -0.18 eV are in excellent agreement with experiment.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline
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