scholarly journals Double polarization hysteresis loop induced by the domain pinning by defect dipoles inHoMnO3epitaxial thin films

2010 ◽  
Vol 81 (1) ◽  
Author(s):  
D. Lee ◽  
H. S. Kim ◽  
S. Y. Jang ◽  
K. W. Joh ◽  
T. W. Noh ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Double Polarization ◽  
Domain Pinning

Removal of 90° domain pinning in (100) Pb(Zr0.15Ti0.85)O3 thin films by pulsed operation

1998 ◽  
Vol 72 (24) ◽  
pp. 3217-3219 ◽  
Author(s):  
Markus Kohli ◽  
Paul Muralt ◽  
Nava Setter
Keyword(s):  
Thin Films ◽  
Domain Pinning

Ferroelectric Property of Ion Beam Enhanced Deposited Lithium Tantalate Thin Film

2011 ◽  
Vol 335-336 ◽  
pp. 1418-1423
Author(s):  
De Yin Zhang ◽  
Wei Qian ◽  
Kun Li ◽  
Jian Sheng Xie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Hysteresis Loop ◽  
Ferroelectric Property ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Fatigue Property ◽  
Lithium Tantalate ◽  
Electric Filed

The Ion Beam Enhanced Deposited (IBED) lithium tantalate (LiTaO3) thin film samples with Al/LiTaO3/Pt electrode structure were prepared on the Pt/Ti/SiO2/Si(100) and SiO2/Si(100) substrate respectively. The crystallization, surface morphology, ferroelectric property, and fatigue property of the prepared samples with the different annealed processes were investigated. The XRD measured results show that the prepared samples have the polycrystal structure of LiTaO3 with the preferred orientation of <012> and <104> located at the 2θ of 23.60 and 32.70 respectively. The SEM morphology analysis reveals the prepared film annealed at 550°C is uniform, smooth and crack-free on the surface and cross section. The ferroelectric property measured results show that the remanent polarization Pr of the samples annealed at different temperature almost increase with the electric field intensity stronger. The leakage current makes the hysteresis loop of the samples subjected to a strong measured electric filed difficult to appear the same saturation hysteresis loop as the single-crystal LiTaO3. The prepared samples annealed at 550°C have a Pr value of 11.5μC/cm2 when subjected to the electrical field of 400kV/cm. The breakdown voltage of the 587nm thick thin film sample is high as to 680 kV/cm. The fatigue property measured results show only 15.17% Pr drop of the prepared films annealed at 550°C appear after 5×1010 cycles polarized by the 10MHz sinusoidal signal with the peak-to-peak amplitude of 10 Volt. The ferroelectric properties of the prepared films meet the practical application requirements of charge response measurement of the LiTaO3 infrared detector owe to the Pr of the prepared films annealed at different temperature large beyond 10μC/cm2 when the prepared films subjected to a strong electric filed larger than 400 kV/cm. The experimental results also show that the surface morphology, the ferroelectric and fatigue properties of the IBED LiTaO3 thin films are significant better than those of the Sol-Gel derived LiTaO3 thin films.

Shape of piezoelectric hysteresis loop for non-ferroelastic switching

2003 ◽  
Vol 784 ◽  
Author(s):  
A. K. Tagantsev ◽  
P. Muralt ◽  
J. Fousek
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Piezoelectric Coefficient ◽  
Hysteresis Loops ◽  
Simple Theory ◽  
The Difference

ABSTRACTA simple theory for the shape of the piezoelectric hysteresis loops (piezoelectric coefficient d vs. applied electric field E) is developed for the case of non-ferroelelastic 180° switching in ferroelectrics. The theory provides explanations for specific features of piezoelectric hysteresis loops, which have been observed in single crystals, thin films and in ceramics in particular. The piezoelectric coefficient may show a “hump”, i.e. when E decreases from the tip of the loop down to zero, d passes through a maximum, and a “nose”, i.e. a self-crossing of the loop close to its tips. The theory also explains the difference in the coercive fields seen in the polarization and piezoelectric loops.

Temperature-electric field hysteresis loop of multicaloric effects in PbZr0.8Ti0.2O3 thin films

2019 ◽  
Vol 383 (24) ◽  
pp. 2933-2937 ◽  
Author(s):  
F. Wang ◽  
T. Liu ◽  
C.L. Xie ◽  
Y. Liu ◽  
N.S. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop

The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Yufei Gao ◽  
Mark Engelhard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hysteresis Loop ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Experimental Results ◽  
Butyl Ether ◽  
Pzt Thin Films ◽  
Pzt Thin Film

AbstractThree kinds of oriented electrodes of Pt, Ir and Pt/Ir electrodes were prepared using electron beam evaporation techniques for deposition of PZT thin films. An oxide MOCVD reactor with liquid delivery system was used for the growth of PZT thin films. [Pb(thd)2], Zr(TMHD)4 and Ti(IPO)4 were dissolved in a mixed solvent of tetrahydrofuran or butyl ether, isopropanol and tetraglyme to form a precursor source. The deposition temperature and pressure were 500 - 650°C and 5 - 10 Torr, respectively. The experimental results showed PZT thin film deposited on various electrodes had different phase formation, microstructure and ferroelectric property. The X-ray patterns showed the perovskite phase of PZT was formed on both Ir and Pt/Ir electrodes at 550°C. The grain size of the PZT thin film increases after a further, higher temperature annealing. The as-deposited PZT thin film on Pt electrode exhibits pyrochlore phase at 550°C. The phase is transformed to perovskite phase after 650°C annealing. The experimental results also indicated that the MOCVD PZT thin film on Pt/Ir exhibits better ferroelectric and electrical properties compared to those deposited on Pt and Ir electrodes. A 300 nm thick PZT thin film on Pt/Ir electrode has a square, well saturated, and symmetrical hysteresis loop with 2Pr value of 40 μC/cm2 and 2Ec of 73 kV/cm at an applied voltage of 5 V. The hysteresis loop of the PZT thin film is almost saturated at 2 V. The leakage current of the film is 6.16 × 10−7 A/cm2 at 100 KV/cm. The electrode effects on ferroelectric properties of PZT thin films also have been investigated.

Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films

1997 ◽  
Vol 40 (2) ◽  
pp. 126-134 ◽  
Author(s):  
Lirong Zheng ◽  
Chenglu Lin ◽  
Huaping Xu ◽  
Shichang Zou ◽  
Okuyama Masanori
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Ferroelectric Thin Films

Modeling of imprint in hysteresis loop of ferroelectric thin films with top and bottom interface layers

2007 ◽  
Vol 90 (4) ◽  
pp. 042902 ◽  
Author(s):  
Z. Ye ◽  
M. H. Tang ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
C. P. Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Ferroelectric Thin Films ◽  
Bottom Interface ◽  
Interface Layers

scholarly journals Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films

2002 ◽  
Vol 92 (5) ◽  
pp. 2734-2739 ◽  
Author(s):  
A. Gruverman ◽  
B. J. Rodriguez ◽  
R. J. Nemanich ◽  
A. I. Kingon
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Domain Pinning
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