Photoluminescence study of the carbon antisite-vacancy pair in4H- and6H-SiC

2009 ◽  
Vol 80 (24) ◽  
Author(s):  
J. W. Steeds
Keyword(s):  
Photoluminescence Study ◽  
Vacancy Pair

scholarly journals Detailed photoluminescence study of Cu2Ge(SSe)3 microcrystals

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085105
Author(s):  
J. Krustok ◽  
R. Kaupmees ◽  
X. Li ◽  
M. Kauk-Kuusik ◽  
M. Grossberg
Keyword(s):  
Photoluminescence Study

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range

2021 ◽  
Vol 129 (24) ◽  
pp. 243104
Author(s):  
M. S. Leanenia ◽  
E. V. Lutsenko ◽  
M. V. Rzheutski ◽  
G. P. Yablonskii ◽  
T. G. Naghiyev ◽  
...  
Keyword(s):  
Excitation Intensity ◽  
Photoluminescence Study ◽  
Temperature Range

scholarly journals Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
A. S. Dahiya ◽  
S. Boubenia ◽  
G. Franzo ◽  
G. Poulin-Vittrant ◽  
S. Mirabella ◽  
...  
Keyword(s):  
Ammonium Hydroxide ◽  
Zno Nanowires ◽  
Photoluminescence Study

scholarly journals Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Ching-Hsiu Chen ◽  
Assamen Ayalew Ejigu ◽  
Liang-Chiun Chao
Keyword(s):  
Electrode Materials ◽  
Variable Temperature ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Flow Rates ◽  
Vacancy Defects ◽  
Photoluminescence Study ◽  
P Type ◽  
Quartz Substrates ◽  
Ion Beam Sputter Deposition

Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.

Photoluminescence study of single ZnO nanostructures: Size effect

2009 ◽  
Vol 95 (5) ◽  
pp. 053113 ◽  
Author(s):  
L. Feng ◽  
C. Cheng ◽  
B. D. Yao ◽  
N. Wang ◽  
M. M. T. Loy
Keyword(s):  
Size Effect ◽  
Zno Nanostructures ◽  
Photoluminescence Study

Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots

2010 ◽  
Vol 96 (7) ◽  
pp. 073102 ◽  
Author(s):  
Ung Thi Dieu Thuy ◽  
Pham Thi Thuy ◽  
Nguyen Quang Liem ◽  
Liang Li ◽  
Peter Reiss
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Study

Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots

2000 ◽  
Vol 69-70 ◽  
pp. 318-323 ◽  
Author(s):  
J Oswald ◽  
K Kuldová ◽  
J Zeman ◽  
E Hulicius ◽  
S Jullian ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Levels ◽  
Photoluminescence Study

Photoluminescence study of ZnSe single crystals melt-grown with B2O3 encapsulant

1997 ◽  
Vol 182 (3-4) ◽  
pp. 329-336 ◽  
Author(s):  
Hiroshi Okada ◽  
Seiichiro Ohmoto ◽  
Takao Kawanaka ◽  
Tsunemasa Taguchi
Keyword(s):  
Single Crystals ◽  
Photoluminescence Study
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