Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells

2009 ◽  
Vol 80 (16) ◽  
Author(s):  
T. K. Sharma ◽  
R. Jangir ◽  
S. Porwal ◽  
R. Kumar ◽  
Tapas Ganguli ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Compositional Dependence ◽  
Bowing Parameter ◽  
Highly Strained

Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

2002 ◽  
Vol 81 (13) ◽  
pp. 2334-2336 ◽  
Author(s):  
S. Mogg ◽  
N. Chitica ◽  
R. Schatz ◽  
M. Hammar
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Highly Strained

scholarly journals Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering

2012 ◽  
Vol 112 (12) ◽  
pp. 123105 ◽  
Author(s):  
L. Lever ◽  
Z. Ikonić ◽  
A. Valavanis ◽  
R. W. Kelsall ◽  
M. Myronov ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Quantum Wells ◽  
Highly Strained ◽  
Sige Quantum Wells

Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers

2000 ◽  
Vol 209 (1) ◽  
pp. 27-36 ◽  
Author(s):  
D Schlenker ◽  
T Miyamoto ◽  
Z Chen ◽  
F Koyama ◽  
K Iga
Keyword(s):  
Quantum Wells ◽  
Highly Strained

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

2014 ◽  
Vol 105 (14) ◽  
pp. 142102 ◽  
Author(s):  
J. D. Gallagher ◽  
C. L. Senaratne ◽  
J. Kouvetakis ◽  
J. Menéndez
Keyword(s):  
Band Gaps ◽  
Compositional Dependence ◽  
Bowing Parameter

Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

2006 ◽  
Vol 32 (4) ◽  
pp. 299-301
Author(s):  
D. A. Vinokurov ◽  
S. A. Zorina ◽  
V. A. Kapitonov ◽  
D. N. Nikolaev ◽  
A. L. Stankevich ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Highly Strained

Electrical Characterization of Highly Strained Ultrathin InAs/GaAs Quantum Wells

1993 ◽  
Vol 326 ◽  
Author(s):  
F. Yu ◽  
R. Droopad ◽  
G.N. Maracas ◽  
J. Liu ◽  
R. Rajesh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization ◽  
Highly Strained

Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 μm) GaInAsN QWs on InP

2002 ◽  
Vol 744 ◽  
Author(s):  
D. Serries ◽  
T. Geppert ◽  
K. Köhler ◽  
P. Ganser ◽  
J. Wagner
Keyword(s):  
Quantum Wells ◽  
Cohesive Energy ◽  
Local Strain ◽  
Indium Content ◽  
Group Iii ◽  
Long Wavelength ◽  
Inp Substrate ◽  
High Indium Content ◽  
Nitrogen Bonds ◽  
Highly Strained

ABSTRACTRecent results on the local bonding of nitrogen in dilute GaInAsN and AlGaAsN on GaAs are reviewed, revealing that bonding of nitrogen in GaInAsN is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III-N bonding in GaInAsN can be changed from Ga-N to In-N by post-growth thermal annealing. In AlGaAsN, in contrast, nitrogen bonds preferentially to Al, i.e. Al-N bonds are formed, due to the much larger cohesive energy of the Al-N bond. Further, results on indium-rich highly strained GaInAsN quantum wells on InP substrate are reported, showing room-temperature photoluminescence at wavelengths up to 2.3 μm. This result demonstrates the potential of high indium content dilute GaInAsN for InP-based long wavelength diode lasers.

Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy

2011 ◽  
Vol 9 (2) ◽  
pp. 255-258 ◽  
Author(s):  
J. Kasai ◽  
R. Akimoto ◽  
T. Hasama ◽  
H. Ishikawa ◽  
S. Fujisaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Yellow Luminescence ◽  
Highly Strained
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