Full-band study of current across silicon nanowire transistors

2007 ◽  
Vol 90 (13) ◽  
pp. 132112 ◽  
Author(s):  
K. Nehari ◽  
N. Cavassilas ◽  
F. Michelini ◽  
M. Bescond ◽  
J. L. Autran ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Full Band

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

Influence of discrete dopant on quantum transport in silicon nanowire transistors

2012 ◽  
Vol 70 ◽  
pp. 92-100 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Isabelle Ferain ◽  
Ran Yu ◽  
Pedram Razavi ◽  
Jean-Pierre Colinge
Keyword(s):  
Quantum Transport ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Reconfigurable Silicon Nanowire Transistors

Nano Letters ◽  
2011 ◽  
Vol 12 (1) ◽  
pp. 119-124 ◽  
Author(s):  
André Heinzig ◽  
Stefan Slesazeck ◽  
Franz Kreupl ◽  
Thomas Mikolajick ◽  
Walter M. Weber
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Transistors
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