Identification of the gallium vacancy–oxygen pair defect in GaN

2009 ◽  
Vol 80 (15) ◽  
Author(s):  
N. T. Son ◽  
C. G. Hemmingsson ◽  
T. Paskova ◽  
K. R. Evans ◽  
A. Usui ◽  
...  
Keyword(s):  
Gallium Vacancy ◽  
Pair Defect

Model of the Jahn-Teller Complex Formed in GaAs by a Gallium Vacancy and a Donor Substituting for a Gallium Atom*

1996 ◽  
Vol 1 (1) ◽  
pp. 209-215
Author(s):  
N. S. Averkiev ◽  
A. A. Gutkin ◽  
S. Yu. Il’inskii ◽  
M. A. Reshchikov ◽  
V. E. Sedov
Keyword(s):  
Gallium Atom ◽  
Gallium Vacancy ◽  
Jahn Teller

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

The formation of pentagon-heptagon pair defect by the reconstruction of vacancy defects in carbon nanotube

2008 ◽  
Vol 92 (4) ◽  
pp. 043104 ◽  
Author(s):  
Gun-Do Lee ◽  
C. Z. Wang ◽  
Euijoon Yoon ◽  
Nong-Moon Hwang ◽  
K. M. Ho
Keyword(s):  
Carbon Nanotube ◽  
Vacancy Defects ◽  
Pair Defect

The role of pentagon–heptagon pair defect in carbon nanotube: The center of vacancy reconstruction

2010 ◽  
Vol 97 (9) ◽  
pp. 093106 ◽  
Author(s):  
Gun-Do Lee ◽  
Cai-Zhuang Wang ◽  
Euijoon Yoon ◽  
Nong-Moon Hwang ◽  
Kai-Ming Ho
Keyword(s):  
Carbon Nanotube ◽  
Pair Defect

scholarly journals Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Lili Cai ◽  
Cuiju Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Lower Energy ◽  
Density Functional ◽  
Nitrogen Vacancy ◽  
Main Peak ◽  
Generalized Gradient ◽  
Vacancy Defects ◽  
Gallium Vacancy ◽  
Defect Levels

The effect of gallium vacancy (VGa) and nitrogen vacancy (VN) defects on the electronic structure and optical properties of GaN using the generalized gradient approximation method within the density functional theory were investigated. The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). The Ga vacancy introduces defect levels at the top of the valence band, and the defect levels are contributed by N2p electron states. In addition, the energy band shifts to lower energy in GaN:VNand moves to higher energy in GaN:VGa. The level splitting is observed in the N2p states of GaN:VNand Ga3d states of GaN:VGa. New peaks appear in lower energy region of imaginary dielectric function in GaN:VNand GaN:VGa. The main peak moves to higher energy slightly and the intensity decreases.

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