Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

1968 ◽  
Vol 168 (3) ◽  
pp. 922-928 ◽  
Author(s):  
E. W. Williams
Keyword(s):  
Donor Center ◽  
Gallium Vacancy

Model of the Jahn-Teller Complex Formed in GaAs by a Gallium Vacancy and a Donor Substituting for a Gallium Atom*

1996 ◽  
Vol 1 (1) ◽  
pp. 209-215
Author(s):  
N. S. Averkiev ◽  
A. A. Gutkin ◽  
S. Yu. Il’inskii ◽  
M. A. Reshchikov ◽  
V. E. Sedov
Keyword(s):  
Gallium Atom ◽  
Gallium Vacancy ◽  
Jahn Teller

scholarly journals Evidence-Based Alignment of Pathology Residency With Practice II: Findings and Implications

2021 ◽  
Vol 8 ◽  
pp. 237428952110028
Author(s):  
W. Stephen Black-Schaffer ◽  
Stanley J. Robboy ◽  
David J. Gross ◽  
James M. Crawford ◽  
Kristen Johnson ◽  
...  
Keyword(s):  
Medical Education ◽  
Graduate Medical Education ◽  
Evidence Based ◽  
Donor Center ◽  
Laboratory Management ◽  
Banking Services ◽  
Graduate Medical ◽  
Pathology Informatics ◽  
Billing And Coding ◽  
Future Practice

This article presents findings from a 4-year series of surveys of new-in-practice pathologists, and a survey of physician employers of new pathologists, assessing how pathology graduate medical education prepares its graduates for practice. Using the methodology described in our previous study, we develop evidence for the importance of residency training for various practice areas, comparing findings over different practice settings, sizes, and lengths of time in practice. The principal findings are (1) while new-in-practice pathologists and their employers report residency generally prepared them well for practice, some areas—billing and coding, laboratory management, molecular pathology, and pathology informatics—consistently were identified as being important in practice but inadequately prepared for in residency; (2) other areas—autopsy pathology, and subspecialized apheresis and blood donor center blood banking services—consistently were identified as relatively unimportant in practice and excessively prepared for in residency; (3) the notion of a single comprehensive model for categorical training in residency is challenged by the disparity between broad general practice in some settings and narrower subspecialty practice in others; and (4) the need for preparation in some areas evolves during practice, raising questions about the appropriate mode and circumstance for training in these areas. The implications of these findings range from rebalancing the emphasis among practice areas in residency, to reconsidering the structure of graduate medical education in pathology to meet present and evolving future practice needs.

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Deep donor center in Ge1 − x Si x 〈Cu,In,Sb〉 crystals at 1050–1080 K

2010 ◽  
Vol 46 (12) ◽  
pp. 1285-1289 ◽  
Author(s):  
G. Kh. Azhdarov ◽  
Z. M. Zeynalov ◽  
V. K. Kyazimova ◽  
L. A. Huseynli
Keyword(s):  
Donor Center ◽  
Deep Donor

scholarly journals Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Lili Cai ◽  
Cuiju Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Lower Energy ◽  
Density Functional ◽  
Nitrogen Vacancy ◽  
Main Peak ◽  
Generalized Gradient ◽  
Vacancy Defects ◽  
Gallium Vacancy ◽  
Defect Levels

The effect of gallium vacancy (VGa) and nitrogen vacancy (VN) defects on the electronic structure and optical properties of GaN using the generalized gradient approximation method within the density functional theory were investigated. The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). The Ga vacancy introduces defect levels at the top of the valence band, and the defect levels are contributed by N2p electron states. In addition, the energy band shifts to lower energy in GaN:VNand moves to higher energy in GaN:VGa. The level splitting is observed in the N2p states of GaN:VNand Ga3d states of GaN:VGa. New peaks appear in lower energy region of imaginary dielectric function in GaN:VNand GaN:VGa. The main peak moves to higher energy slightly and the intensity decreases.

Gallium vacancy production in carbon, oxygen, and arsenic irradiated n-type gallium arsenide

1998 ◽  
Author(s):  
Alain J. Houdayer ◽  
Cosmo Carlone ◽  
Kenji Yoshino ◽  
Marcel Aubin ◽  
Sidi Aboujja ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Gallium Vacancy
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