scholarly journals Resonant impurity scattering and electron-phonon scattering in the electrical resistivity of Cr thin films

2009 ◽  
Vol 80 (13) ◽  
Author(s):  
Z. Boekelheide ◽  
David W. Cooke ◽  
E. Helgren ◽  
F. Hellman
2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.


2006 ◽  
Vol 129 (4) ◽  
pp. 492-499 ◽  
Author(s):  
A. Bulusu ◽  
D. G. Walker

Several new reduced-scale structures have been proposed to improve thermoelectric properties of materials. In particular, superlattice thin films and wires should decrease the thermal conductivity, due to increased phonon boundary scattering, while increasing the local electron density of states for improved thermopower. The net effect should be increased ZT, the performance metric for thermoelectric structures. Modeling these structures is challenging because quantum effects often have to be combined with noncontinuum effects and because electronic and thermal systems are tightly coupled. The nonequilibrium Green’s function (NEGF) approach, which provides a platform to address both of these difficulties, is used to predict the thermoelectric properties of thin-film structures based on a limited number of fundamental parameters. The model includes quantum effects and electron-phonon scattering. Results indicate a 26–90 % decrease in channel current for the case of near-elastic, phase-breaking, electron-phonon scattering for single phonon energies ranging from 0.2 meV to 60 meV. In addition, the NEGF model is used to assess the effect of temperature on device characteristics of thin-film heterojunctions whose applications include thermoelectric cooling of electronic and optoelectronic systems. Results show the predicted Seebeck coefficient to be similar to measured trends. Although superlattices have been known to show reduced thermal conductivity, results show that the inclusion of scattering effects reduces the electrical conductivity leading to a significant reduction in the power factor (S2σ).


1982 ◽  
Vol 60 (5) ◽  
pp. 693-702 ◽  
Author(s):  
Nathan Wisbr

The temperature-dependent part of the electrical resistivity ρ(T) of a metal consists of the sum of two terms, one term being due to electron–phonon scattering ρcp(T) and the other term being due to electron–electron scattering ρcc(T). One may write[Formula: see text]where θD, is the Debye temperature of the metal and the coefficients C and A give the magnitudes of ρcp(T) and ρcc(T), respectively. For a metal whose electrical resistivity exhibits "simple" behavior, it had been expected that the measured data for ρ(T) would have the following properties. (i) The function f(T/θD) should approach (T/θD) for [Formula: see text]. (ii) The magnitude of the coefficient C should be the same, or nearly so, for all measured samples. (iii) The magnitude of the coefficient A should be the same, or nearly so, for all measured samples.The low-temperature ρexpt(T) data for potassium, which has by now been measured for many samples, exhibit none of these three properties. A discussion will be presented of the reasons for this "non-simple" behavior of ρexpt(T) for potassium.


2012 ◽  
Vol 85 (3) ◽  
Author(s):  
Sébastien Giraud ◽  
Arijit Kundu ◽  
Reinhold Egger

2006 ◽  
Vol 20 (16) ◽  
pp. 989-994 ◽  
Author(s):  
R. LAL ◽  
V. P. S. AWANA ◽  
K. P. SINGH ◽  
R. B. SAXENA ◽  
H. KISHAN ◽  
...  

Measurements have been performed on the resistivity of samples MgB 2, AlB 2 and AgB 2. The samples show presence of impurities. By analyzing the data in terms of impurity scattering, electron-phonon scattering, and weak localization, it has been found that the AlB 2 ( AgB 2) sample involves maximum (minimum) effect of the impurity, electron-phonon interaction and weak localization.


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