Electrical Resistivity Due to Electron–Phonon Scattering in Thin Gadolinum Films

1988 ◽  
Vol 149 (2) ◽  
pp. 543-546 ◽  
Author(s):  
A. Urbaniak-Kucharczyk
Keyword(s):  
Electrical Resistivity ◽  
Phonon Scattering ◽  
Electron Phonon Scattering

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Is potassium a simple metal?

1982 ◽  
Vol 60 (5) ◽  
pp. 693-702 ◽  
Author(s):  
Nathan Wisbr
Keyword(s):  
Electrical Resistivity ◽  
Electron Scattering ◽  
Phonon Scattering ◽  
Measured Data ◽  
The Other ◽  
Simple Metal ◽  
Temperature Dependent ◽  
Dependent Part ◽  
Simple Behavior ◽  
Electron Phonon Scattering

The temperature-dependent part of the electrical resistivity ρ(T) of a metal consists of the sum of two terms, one term being due to electron–phonon scattering ρcp(T) and the other term being due to electron–electron scattering ρcc(T). One may write[Formula: see text]where θD, is the Debye temperature of the metal and the coefficients C and A give the magnitudes of ρcp(T) and ρcc(T), respectively. For a metal whose electrical resistivity exhibits "simple" behavior, it had been expected that the measured data for ρ(T) would have the following properties. (i) The function f(T/θD) should approach (T/θD) for [Formula: see text]. (ii) The magnitude of the coefficient C should be the same, or nearly so, for all measured samples. (iii) The magnitude of the coefficient A should be the same, or nearly so, for all measured samples.The low-temperature ρexpt(T) data for potassium, which has by now been measured for many samples, exhibit none of these three properties. A discussion will be presented of the reasons for this "non-simple" behavior of ρexpt(T) for potassium.

Temperature Dependence of the Electrical Resistivity in Nanocrystalline Gold Films Made by Advanced GaS Deposition

1999 ◽  
Vol 581 ◽  
Author(s):  
J. Ederth ◽  
L. B. Kiss ◽  
G. A. Niklasson ◽  
C. G. Granqvist ◽  
E. Olsson
Keyword(s):  
Grain Size ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Atmospheric Pressure ◽  
Nanocrystalline Materials ◽  
Phonon Scattering ◽  
Sudden Change ◽  
Gold Films ◽  
Temperature Coefficient Of Resistivity ◽  
Electron Phonon Scattering

ABSTRACTNanocrystalline thin Au films with grain size 10 - 76 nm have been analyzed regarding the temperature dependence of the electrical resistivity. A sudden change in the power function, ρ α Tn, was found at ∼10 K, where n = 1.7 in the range 5 - 10 K and n = 3.3 in the range 10 - 15 K. This effect disappears after annealing at 773 K for 0.5 h in air at atmospheric pressure. After the annealing the grain size was ∼ 100 nm. This is an indication of interference between electron-phonon scattering and electron-grain boundary scattering in nanocrystalline materials at low temperatures.The temperature coefficient of resistivity, TCR, increased with increasing grain size at any temperature and the position of the maximum TCR was shifted towards lower temperatures with increasing grain size.

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