scholarly journals Resistive switching and resonant tunneling in epitaxial perovskite tunnel barriers

2009 ◽  
Vol 80 (3) ◽  
Author(s):  
Junwoo Son ◽  
Susanne Stemmer
Keyword(s):  
Resistive Switching ◽  
Resonant Tunneling ◽  
Tunnel Barriers

Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics

2015 ◽  
Vol 15 (10) ◽  
pp. 7569-7572 ◽  
Author(s):  
Sukhyung Park ◽  
Kyoungah Cho ◽  
Jungwoo Jung ◽  
Sangsig Kim
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Tunnel Barrier ◽  
Tunnel Barriers ◽  
Retention Characteristics ◽  
Resistance State ◽  
Switching Characteristics

In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics.

scholarly journals Random barrier double-well model for resistive switching in tunnel barriers

2011 ◽  
Vol 109 (8) ◽  
pp. 083712 ◽  
Author(s):  
Eric Bertin ◽  
David Halley ◽  
Yves Henry ◽  
Nabil Najjari ◽  
Hicham Majjad ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Well Model ◽  
Tunnel Barriers ◽  
Random Barrier

Investigation of quantum well and tunnel barrier growth by resonant tunneling

1986 ◽  
Vol 1 (2) ◽  
pp. 337-342 ◽  
Author(s):  
M.A. Reed ◽  
J.W. Lee ◽  
R.K. Aldert ◽  
A.E. Wetsel
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Tunnel Barrier ◽  
Systematic Mapping ◽  
Contour Maps ◽  
Growth Structure ◽  
Current Voltage ◽  
Tunnel Barriers ◽  
Current Voltage Characteristics ◽  
Resonant Tunneling Structure

We present the first known systematic mapping of quantum well and tunnel barrier thicknesses in a resonant tunneling structure by transport measurements. The technique derives a 1 Å averaged resolution for quantum well and barrier thicknesses, independently for the quantum well and adjacent tunnel barriers. Contour maps of the structure reveal an asymmetric shallow ring growth structure for one of the epilayers. Current-voltage characteristics and temperature dependence of the resonant tunneling structures will also be discussed.

Resonant tunneling through traps in Schottky barriers

1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve
Keyword(s):  
Resonant Tunneling ◽  
Schottky Barriers

RESONANT TUNNELING DEVICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Fabrication of Ferromagnetic Tunnel Junctions with ICP Oxidized Tunnel Barriers.

1999 ◽  
Vol 23 (4−2) ◽  
pp. 1281-1284 ◽  
Author(s):  
J. Sugawara ◽  
E. Nakashio ◽  
S. Kumagai ◽  
J. Honda ◽  
Y. Ikeda ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Tunnel Barriers

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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