Resolving the Landauer paradox in ferroelectric switching by high-field charge injection

2009 ◽  
Vol 80 (2) ◽  
Author(s):  
An-Quan Jiang ◽  
Hyun Ju Lee ◽  
Cheol Seong Hwang ◽  
Ting-Ao Tang
Keyword(s):  
High Field ◽  
Charge Injection ◽  
Ferroelectric Switching

Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric-dielectric bilayer

Nanoscale ◽  
2021 ◽  
Author(s):  
Hyeon Woo Park ◽  
Seung Dam Hyun ◽  
In Soo Lee ◽  
Suk Hyun Lee ◽  
Yong Bin Lee ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
High Field ◽  
Charge Injection ◽  
Dielectric Layers ◽  
Ferroelectric Switching ◽  
Thin Dielectric Layer

Charge injection from the near-by-electrode can occur during ferroelectric switching in the ferroelectric-dielectric bilayer due to the high field applied to the adjacent dielectric layers. The aim of this study...

Rapid Thermal Processing and Properties of Sol-Gel Derived Ferroelectric Thin-Films for Non-Volatile Memories.

1991 ◽  
Vol 224 ◽  
Author(s):  
C. K. Barlingay ◽  
S. K Dey
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
High Field ◽  
Growth Habit ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Field Measurements ◽  
Ferroelectric Thin Films ◽  
Columnar Growth ◽  
Ferroelectric Switching

AbstractFerroelectric Pb(Zr0.52Ti0.48)O3 or PZT (52/48) thin-films (0.5 μm) were integrated onto Pt passivated Si wafers (3–4 inches) by polymeric solgel processing followed by rapid thermal annealing. Dense and crack-free perovskite microstructures were obtained by densification of the amorphous gel-matrix prior to crystallization. The films exhibited submicron grains (0.2–0.6 μm) with a columnar growth habit. High field measurements on thin-films determined Pr, Psp, and Ec in the ranges of 29–32 μC/cm2. 44–58 μC/cm2, and 50–60 kV/cm, respectively, and ferroelectric switching times below 3 ns.

The Role of Electron and Hole Traps in the Degradation and Breakdown of thermally grown SiO2 Layers

1987 ◽  
Vol 105 ◽  
Author(s):  
M. M. Heyns ◽  
R. F. De Keersmaecker
Keyword(s):  
Oxide Layer ◽  
High Field ◽  
Charge Injection ◽  
Charge Trapping ◽  
Electron Traps ◽  
Field Stress ◽  
Interface Charge ◽  
Electron And Hole Traps ◽  
Thermally Grown

AbstractThe degradation and charge build-up of thermally grown silicon diozide layers (with thicknesses varying between 20 and 40 nm) during various stress experiments was investigated. The slow trapping instability generated during charge injection was demonstrated to originate from initially present hole traps. The generation of electron traps in the oxide layer close to the non-injecting interface during high-field stressing was established both for Al-gate and poly-Si gate structures. No evidence could be found for the generation of hole traps during high-field stressing. No bulk oxide charges were detected after a high-field stress, but only unstable near-interface charge trapping was evidenced.

Low-Voltage Pb(Zr,Ti)O3 Film Capacitors: Control of Charge Relaxation at the Interfaces

1999 ◽  
Vol 596 ◽  
Author(s):  
I. Stolichnov ◽  
A. Tagantsev ◽  
S. Gentil ◽  
S. Hiboux ◽  
P. Muralt ◽  
...  
Keyword(s):  
Size Effects ◽  
Low Voltage ◽  
Charge Injection ◽  
Fatigue Performance ◽  
Charge Relaxation ◽  
Positive Effects ◽  
Pzt Film ◽  
Electrode Interface ◽  
Ferroelectric Capacitors ◽  
Ferroelectric Switching

AbstractIt is suggested that the processes of charge injection and entrapment at the interfacial layer of Pb(Zr,Ti)O3 (PZT) film capacitors are responsible for both polarization fatigue and size effects on ferroelectric switching. The study of the charge injection by analyzing the dependence of coercive field on maximum polarization shows that there is a direct relationship between the charge injection properties and fatigue performance. Based on our results, we conclude that enhancement of charge relaxation at the interfaces of PZT capacitors results in two positive effects: improvement of polarization fatigue performance and suppression of size effects on ferroelectric switching, which are detrimental for low-voltage PZT film capacitors.This idea has been implemented experimentally by introducing a thin RuO2 layer into the top-electrode interface of the Pt/PZT/Pt capacitor. PZT film capacitors of 100–170 nm thickness prepared in this way exhibited substantially improved fatigue in combination with weak size effects, which allows reduction of the operation voltage down to 0.8 V without degradation of the hysteresis properties. Our results show that the control of charge relaxation at the interface is a key issue for development of the low-voltage ferroelectric capacitors.

Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

1987 ◽  
Vol 45 ◽  
pp. 54-55
Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Transport Current ◽  
Total Thickness ◽  
New Class ◽  
Ceramic Superconductors ◽  
Current Densities ◽  
Group Ii ◽  
Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

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