scholarly journals Relative stability of extended interstitial defects in silicon: First-principles calculations

2009 ◽  
Vol 79 (24) ◽  
Author(s):  
Hyoungki Park ◽  
John W. Wilkins
RSC Advances ◽  
2017 ◽  
Vol 7 (65) ◽  
pp. 41057-41062 ◽  
Author(s):  
Xiaofeng Yang ◽  
Zongbao Li ◽  
Xinyu Li ◽  
Ao Wang ◽  
Lichao Jia ◽  
...  

The oxygen reduction reaction properties on PdO and Zr-doped PdO surfaces, and the relative stability of the concerned surfaces, have been studied by first-principles calculations.


2013 ◽  
Vol 159 ◽  
pp. 70-75 ◽  
Author(s):  
Chun-Xia Li ◽  
Hu-Bin Luo ◽  
Qing-Miao Hu ◽  
Rui Yang ◽  
Fu-Xing Yin ◽  
...  

2008 ◽  
Vol 63 (6) ◽  
pp. 668-672 ◽  
Author(s):  
Elena Arroyo y de Dompablo ◽  
Emilio Morán

First-principles calculations were performed to compare the relative stability and high-pressure behavior of four different GaAsO4 polymorphs: the ordinary-pressure phase (berlinite, α-quartzlike) and three high-pressure phases: the β -VCrO4-like, the rutile-like and a new hexagonal form, recently discovered and related to rutile.


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