scholarly journals Charge-order melting and magnetic phase separation in thin films ofPr0.7Ca0.3MnO3.

2009 ◽  
Vol 79 (22) ◽  
Author(s):  
Y. Q. Zhang ◽  
Z. D. Zhang ◽  
J. Aarts
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Magnetic Phase ◽  
Charge Order

Complex magnetic phase separation induced by Li-doping in multiferroic CaBaCo4O7

2013 ◽  
Vol 113 (5) ◽  
pp. 053910 ◽  
Author(s):  
Md. Motin Seikh ◽  
Tapati Sarkar ◽  
V. Pralong ◽  
V. Caignaert ◽  
B. Raveau
Keyword(s):  
Phase Separation ◽  
Magnetic Phase ◽  
Li Doping

Oxygen off-stoichiometry and phase separation in EuO thin films

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
S. G. Altendorf ◽  
A. Efimenko ◽  
V. Oliana ◽  
H. Kierspel ◽  
A. D. Rata ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Separation

scholarly journals Depth selective magnetic phase coexistence in FeRh thin films

APL Materials ◽  
2020 ◽  
Vol 8 (12) ◽  
pp. 121103
Author(s):  
W. Griggs ◽  
B. Eggert ◽  
M. O. Liedke ◽  
M. Butterling ◽  
A. Wagner ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Phase ◽  
Phase Coexistence

Phase Separation and Molecular Intermixing in Polymer–Fullerene Bulk Heterojunction Thin Films

2012 ◽  
Vol 3 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Matthias A. Ruderer ◽  
Robert Meier ◽  
Lionel Porcar ◽  
Robert Cubitt ◽  
Peter Müller-Buschbaum
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Bulk Heterojunction

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

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