scholarly journals Mechanism of stimulated optical emission from MgO microcrystals with color centers

2009 ◽  
Vol 79 (16) ◽  
Author(s):  
T. Uchino ◽  
D. Okutsu ◽  
R. Katayama ◽  
S. Sawai
Keyword(s):  
Optical Emission ◽  
Color Centers

scholarly journals Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

2019 ◽  
Vol 10 ◽  
pp. 2383-2395 ◽  
Author(s):  
Stefania Castelletto ◽  
Abdul Salam Al Atem ◽  
Faraz Ahmed Inam ◽  
Hans Jürgen von Bardeleben ◽  
Sophie Hameau ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Silicon Carbide ◽  
In Vivo Imaging ◽  
Near Infrared ◽  
Fluorescence Emission ◽  
Optical Emission ◽  
Color Centers ◽  
Different Temperatures ◽  
Distinct Color

We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.

Characterization of ultraintense laser produced fast electron propagation in insulatorsvs.conductors by optical emission diagnostics

2006 ◽  
Vol 133 ◽  
pp. 499-502 ◽  
Author(s):  
M. Manclossi ◽  
J. J. Santos ◽  
J. Faure ◽  
A. Guenmie-Tafo ◽  
D. Batani ◽  
...  
Keyword(s):  
Fast Electron ◽  
Optical Emission ◽  
Electron Propagation

Impact of Surface Morphology and Polarity on ZnO Optical Emission

2008 ◽  
Author(s):  
Leonard Brillson ◽  
Daniel Doutt ◽  
Yufeng Dong ◽  
Michelle Myers ◽  
Dina Tayim ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Optical Emission

Optical emission sensing for laser-based additive manufacturing—What are we actually measuring?

2021 ◽  
Vol 33 (1) ◽  
pp. 012010
Author(s):  
Christopher B. Stutzman ◽  
Wesley F. Mitchell ◽  
Abdalla R. Nassar
Keyword(s):  
Additive Manufacturing ◽  
Optical Emission

THE TELLURIUM OPTICAL EMISSION EXCITED BY ELECTRON IMPACT

2013 ◽  
Vol 33 (0) ◽  
pp. 106-109
Author(s):  
М. М. Ердевді ◽  
В. В. Звенигородський ◽  
П. П. Маркуш ◽  
О. Б. Шпеник
Keyword(s):  
Electron Impact ◽  
Optical Emission

Preparation of TiN Films by Magnetron Sputtering and Diagnostics for Optical Emission of Magnetron Plasma.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 339-342 ◽  
Author(s):  
Yasuki AIHARA ◽  
Yuko HIROHATA ◽  
Tomoaki HINO ◽  
Toshiro YAMASHINA
Keyword(s):  
Magnetron Sputtering ◽  
Optical Emission ◽  
Tin Films

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

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