scholarly journals Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

2009 ◽  
Vol 79 (15) ◽  
Author(s):  
A. Matos-Abiague ◽  
J. Fabian
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Orbit Coupling ◽  
Tunneling Magnetoresistance ◽  
Anisotropic Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit

scholarly journals Influence of spin-orbit coupling on the transport properties of magnetic tunnel junctions

2005 ◽  
Vol 72 (18) ◽  
Author(s):  
V. Popescu ◽  
H. Ebert ◽  
N. Papanikolaou ◽  
R. Zeller ◽  
P. H. Dederichs
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit

SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE

2008 ◽  
Vol 22 (27) ◽  
pp. 2667-2676 ◽  
Author(s):  
DE LIU ◽  
HONGMEI ZHANG
Keyword(s):  
Spin Polarization ◽  
Coupling Strength ◽  
Channel Length ◽  
Ferromagnetic Semiconductor ◽  
Orbit Coupling ◽  
Tunneling Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Left And Right

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.

Calculation of the anisotropic magnetoresistance in the electron gas

2015 ◽  
Vol 29 (34) ◽  
pp. 1550230
Author(s):  
J. Azizi
Keyword(s):  
Boltzmann Equation ◽  
Low Temperature ◽  
Electron Scattering ◽  
Coupling Strength ◽  
Electron Gas ◽  
Orbit Coupling ◽  
Anisotropic Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Potential Approximation

In this paper, the anisotropic magnetoresistance (AMR) and electron conductivity of electron gas in presence of the Rashba and Dresselhaus spin-orbit coupling are investigated. Boltzmann equation is solved exactly for low temperature, including electron scattering. Calculations have been performed within the coherent potential approximation. Results of the transport study demonstrate that the AMR enhances as the Rashba strength increases. It is also observed that the AMR depends critically on spin-orbit coupling strength, wave vector and Dresselhaus strength.

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