Effect of Rashba spin-orbit coupling on the spin-dependent transport in magnetic tunnel junctions with semiconductor interlayers

2010 ◽  
Vol 107 (10) ◽  
pp. 103722 ◽  
Author(s):  
Lian Jin ◽  
Lin Zhu ◽  
Xun Zhou ◽  
Ling Li ◽  
Zheng-Wei Xie
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Farhad Sattari ◽  
Soghra Mirershadi

AbstractThe effect of the strain on the spin and valley dependent transport properties, including the conductance and polarization, through a monolayer MoS2 superlattice under Rashba spin–orbit coupling is theoretically investigated. It is found that the conductance strongly depends on the spin and valley degrees of freedom, and spin-inversion can be achieved by MoS2 superlattice. Also, the spin and valley dependent conductance in a monolayer MoS2 superlattice can be efficiently adjusted via strain and the number of the superlattice barriers. Moreover, it is demonstrated that both the magnitude and sign of the spin and valley polarization depend on the strain strength, the number of barriers, and electrostatic barrier height. Both full spin and valley polarized current (with 100% or − 100% efficiency) can be realized in a MoS2 superlattice under strain.


2005 ◽  
Vol 72 (18) ◽  
Author(s):  
V. Popescu ◽  
H. Ebert ◽  
N. Papanikolaou ◽  
R. Zeller ◽  
P. H. Dederichs

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