scholarly journals Spin diffusion in Si/SiGe quantum wells: Spin relaxation in the absence of D’yakonov-Perel’ relaxation mechanism

2009 ◽  
Vol 79 (7) ◽  
Author(s):  
P. Zhang ◽  
M. W. Wu
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Spin Diffusion ◽  
Relaxation Mechanism ◽  
Sige Quantum Wells

Studies on Electron Spin Relaxation in AlGaAs/GaAs Multi Quantum Wells

2011 ◽  
Vol 143-144 ◽  
pp. 216-219
Author(s):  
Yu Wu
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Relaxation Mechanism ◽  
Electron Spin Polarization ◽  
Time Resolved ◽  
Pump Probe ◽  
Electron Spin Relaxation ◽  
Probe Spectroscopy

Time-resolved circularly polarized pump-probe spectroscopy is used to study the carrier density dependence of the electron spin polarization dynamics in AlGaAs/GaAs multi quantum wells at room temperature. Experimental results show that the spin relaxation time increases with the carrier density, which is in conformity with D'yakonov-Perel relaxation mechanism.

Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells

2003 ◽  
Vol 16 (1) ◽  
pp. 111-120 ◽  
Author(s):  
Z Wilamowski ◽  
W Jantsch ◽  
N Sandersfeld ◽  
M Mühlberger ◽  
F Schäffler ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Two Dimensional ◽  
G Factor ◽  
Sige Quantum Wells

INVESTIGATION OF SPIN TRANSPORT IN SEMICONDUCTORS BY SPATIALLY RESOLVED TWO-COLOR HANLE-MOKE MEASUREMENTS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2760-2765
Author(s):  
W. OSSAU ◽  
J.-H. QUAST ◽  
G. V. ASTAKHOV ◽  
H. HOFFMANN ◽  
L. MOLENKAMP
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Spin Relaxation Time ◽  
Injection Point ◽  
Spin Pumping ◽  
Spatially Resolved ◽  
Considerable Impact

We report on a considerable impact of light on spin transport in unstrained n -type GaAs . Increasing the intensity of optical spin pumping results in a significant expansion of spin diffusion. Furthermore, in the regime of strong spin pumping the spin gradient, which can be interpreted in terms of a spin outflow from the injection point is enhanced by application of a weak magnetic field. In addition we report on optical spin pumping of modulation doped CdTe -based quantum wells. Using a two-color Hanle-MOKE technique, we find a spin relaxation time of 34 ns in the nearly unperturbed electron gas. Independent variation of pump and probe energies demonstrates the presence of additional electrons in the quantum well, whose spin relaxation time is substantially shorter.

Electron Spin Relaxation in Semiconductor Quantum Wells

2012 ◽  
Vol 424-425 ◽  
pp. 155-158
Author(s):  
Yu Wu ◽  
Qian Shou
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Density ◽  
Relaxation Mechanism ◽  
Spin Relaxation Time ◽  
Multiple Quantum ◽  
Pump Probe ◽  
Electron Spin Relaxation

The dependence of electron spin relaxation on the carrier density are investigated based on the D’yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps at carrier density of 1×1017 to 1×1018cm－3 consistent with the theoretical prediction. This result reveals that with the increment of the carrier density, the spin orbit interaction reduces due to the more frequent momentum scattering and the spin relaxation time prolongs

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