Electronic structure of Mn-doped III-V semiconductor quantum dots

2008 ◽  
Vol 78 (19) ◽  
Author(s):  
Sucismita Chutia ◽  
A. K. Bhattacharjee
2019 ◽  
Vol 123 (5) ◽  
pp. 3067-3075 ◽  
Author(s):  
Dhamodaran Manikandan ◽  
A. K. Yadav ◽  
S. N. Jha ◽  
D. Bhattacharyya ◽  
D. W. Boukhvalov ◽  
...  

2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


2006 ◽  
Vol 16 (20) ◽  
pp. 1963-1972 ◽  
Author(s):  
Stanko Tomić ◽  
Andrew G. Sunderland ◽  
Ian J. Bush

1995 ◽  
Vol 212 (3) ◽  
pp. 245-250 ◽  
Author(s):  
Lavanya M. Ramaniah ◽  
Selvakumar V. Nair

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