Nature of the power-dependent ultrafast relaxation process of photoexcited charge carriers in II-VI semiconductor quantum dots: Effects of particle size, surface, and electronic structure

1998 ◽  
Vol 108 (5) ◽  
pp. 2143-2151 ◽  
Author(s):  
Trevor W. Roberti ◽  
Nerine J. Cherepy ◽  
Jin Z. Zhang
2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


Author(s):  
M. M. Glazov

Creation, detection, and manipulation of spin degrees of freedom of electrons and nuclei, phenomena of spin relaxation, decoherence and dephasing, and processes of spin transfer between different subsystems are among the most important problems studied in semiconductor spintronics. These effects are most pronounced in systems with localized charge carriers, such as semiconductor quantum dots. This chapter contains the motivation behind and a brief review of the material presented in the book. It also clarifies the logic of the presentation in further chapters. Chapter 1 may be helpful to readers willing to find appropriate material without going through the whole book, as it contains a concise overview of the other chapters.


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