Impurity effects on the electronic structure of square quantum dots: A full configuration-interaction study

2008 ◽  
Vol 78 (12) ◽  
Author(s):  
Bhalchandra S. Pujari ◽  
Kavita Joshi ◽  
D. G. Kanhere ◽  
S. A. Blundell
2012 ◽  
Vol 117 (1) ◽  
pp. 192-199 ◽  
Author(s):  
Marco Verdicchio ◽  
Gian Luigi Bendazzoli ◽  
Stefano Evangelisti ◽  
Thierry Leininger

2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


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