scholarly journals Optical properties of self-organized wurtzite InN∕GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation

2005 ◽  
Vol 87 (23) ◽  
pp. 231114 ◽  
Author(s):  
N. Baer ◽  
S. Schulz ◽  
S. Schumacher ◽  
P. Gartner ◽  
G. Czycholl ◽  
...  
2006 ◽  
Vol 3 (11) ◽  
pp. 3827-3831 ◽  
Author(s):  
S. Schulz ◽  
N. Baer ◽  
S. Schumacher ◽  
P. Gartner ◽  
F. Jahnke ◽  
...  

2000 ◽  
Vol 43 (5) ◽  
pp. 527-532 ◽  
Author(s):  
Wensheng Shi ◽  
Zhenghao Chen ◽  
Ningning Liu ◽  
Huibin LÜ ◽  
Yueliang Zhou ◽  
...  

2008 ◽  
Vol 8 (3) ◽  
pp. 1502-1511
Author(s):  
Diksha Kaushik ◽  
R. R. Singh ◽  
A. B. Sharma ◽  
D. Gupta ◽  
M. Sharma ◽  
...  

Self-organized ZnSe quantum dots (Q-ZnSe) were grown on indium tin oxide substrate using wet chemical technique without or in presence of copper and manganese dopants. The structural, morphological and luminescence properties of the as grown Q-dot films have been investigated, using X-ray diffraction, transmission electron microscopy, atomic force microscopy and optical and luminescence spectroscopy. Composition of the samples were analyzed using atomic absorption spectroscopy. The quantum dots have been shown to deposit in a compact, uniform and organized array on the indium tin oxide substrate. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass and tight binding approximations. It is shown that the experimentally determined absorption edges depart significantly from the theoretically calculated values. The photoluminescence properties of the undoped as well as doped Q-ZnSe have also been discussed.


1998 ◽  
Vol 323 (1-2) ◽  
pp. 174-177 ◽  
Author(s):  
C.S Peng ◽  
Q Huang ◽  
Y.H Zhang ◽  
W.Q Cheng ◽  
T.T Sheng ◽  
...  

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