scholarly journals Charge noise in single-electron transistors and charge qubits may be caused by metallic grains

2008 ◽  
Vol 78 (12) ◽  
Author(s):  
S. Kafanov ◽  
H. Brenning ◽  
T. Duty ◽  
P. Delsing
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
Charge Qubits ◽  
Metallic Grains ◽  
Electron Transistors ◽  
Charge Noise

Fabrication and Measurement of Aluminum and Niobium Based Single-Electron Transistors and Charge Qubits

2005 ◽  
pp. 266-276
Author(s):  
Wolfram Krech ◽  
Detlef Born ◽  
Marián Mihalik ◽  
Miroslav Grajcar ◽  
Thomas Wagner ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
Charge Qubits ◽  
Electron Transistors

Low-frequency charge noise in suspended aluminum single-electron transistors

2007 ◽  
Vol 91 (3) ◽  
pp. 033107 ◽  
Author(s):  
T. F. Li ◽  
Yu. A. Pashkin ◽  
O. Astafiev ◽  
Y. Nakamura ◽  
J. S. Tsai ◽  
...  
Keyword(s):  
Low Frequency ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Charge Noise

scholarly journals Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 871-876 ◽  
Author(s):  
Jasper P. Fried ◽  
Xinya Bian ◽  
Jacob L. Swett ◽  
Ivan I. Kravchenko ◽  
G. Andrew D. Briggs ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Large Amplitude ◽  
Room Temperature ◽  
Charge Trapping ◽  
Current Level ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Temperature Liquid ◽  
Electron Transistors ◽  
Charge Noise

We analyze the noise in room-temperature liquid-gated quantum dots. We demonstrate large amplitude charge noise and two-level fluctuations in the current level which we attribute to charge trapping at the disordered graphene edges.

Fabrication and Measurement of Aluminum and Niobium Based Single-Electron Transistors and Charge Qubits

2005 ◽  
pp. 327-337
Author(s):  
Wolfram Krech ◽  
Detlef Born ◽  
Marián Mihalik ◽  
Miroslav Grajcar ◽  
Thomas Wagner ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
Charge Qubits ◽  
Electron Transistors

scholarly journals Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105005
Author(s):  
Mitsuki Ito ◽  
Mamiko Yagi ◽  
Moe Shimada ◽  
Jun-ichi Shirakashi
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
In Series ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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