scholarly journals Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 871-876 ◽  
Author(s):  
Jasper P. Fried ◽  
Xinya Bian ◽  
Jacob L. Swett ◽  
Ivan I. Kravchenko ◽  
G. Andrew D. Briggs ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Large Amplitude ◽  
Room Temperature ◽  
Charge Trapping ◽  
Current Level ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Temperature Liquid ◽  
Electron Transistors ◽  
Charge Noise

We analyze the noise in room-temperature liquid-gated quantum dots. We demonstrate large amplitude charge noise and two-level fluctuations in the current level which we attribute to charge trapping at the disordered graphene edges.

Room-Temperature Carbon Nanotube Single-Electron Transistors with Mechanical Buckling-Defined Quantum Dots

2018 ◽  
Vol 4 (5) ◽  
pp. 1700628 ◽  
Author(s):  
Jian Zhang ◽  
Siyu Liu ◽  
Lingyuan Kong ◽  
Jean Pierre Nshimiyimana ◽  
Xiao Hu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Mechanical Buckling ◽  
Electron Transistors

scholarly journals Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

2017 ◽  
Vol 28 (12) ◽  
pp. 125208 ◽  
Author(s):  
Zahid A K Durrani ◽  
Mervyn E Jones ◽  
Chen Wang ◽  
Dixi Liu ◽  
Jonathan Griffiths
Keyword(s):  
Excited States ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature

2017 ◽  
Vol 26 (12) ◽  
pp. 1750201
Author(s):  
Hamed Aminzadeh ◽  
Mohammad Ali Dashti ◽  
Mohammad Miralaei
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Symmetric Functions ◽  
Single Electron ◽  
Stable Operation ◽  
Single Electron Transistors ◽  
Analog To Digital ◽  
Temperature Range ◽  
Electron Transistors

Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb blockade regime covers effectively the higher temperature range. Si QD-based SETs are also fully compatible with advanced CMOS technology and they can be manufactured using routine nanofabrication steps. At first, we present the principles of operation of Si SETs used for room-temperature operation. Possible flash-type ADC architectures are then investigated and the design considerations of possible Coulomb oscillation regimes are addressed. A modified design procedure is then introduced for [Formula: see text]-bit SET-based ADCs, and validated through simulation of a 3-bit ADC with a sampling frequency of 5 GS/s. The ADC core is comprised from a capacitive signal divider followed by three periodic symmetric functions (PSFs). Simulation results demonstrate the stability of output signals at the room-temperature range.

Room Temperature Nb-Based Single-Electron Transistors

1997 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Kazuhiko Matsumoto ◽  
Naruhisa Miura ◽  
Makoto Konagai
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors

1997 ◽  
Author(s):  
Seiya Kasai ◽  
Yoshihiro Satoh ◽  
Hiroshi Okada ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
Quantum Dots ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Gate Control ◽  
Electron Transistors
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