Electronic properties of boron nitride nanocones under the influence of parallel and perpendicular external electric fields

2008 ◽  
Vol 78 (8) ◽  
Author(s):  
D. Pedreira ◽  
S. Azevedo ◽  
M. Machado
2017 ◽  
Vol 5 (32) ◽  
pp. 8128-8134 ◽  
Author(s):  
Longhua Li ◽  
Weidong Shi

The interplay of internal and external electric fields provides an effective way to modulate the electronic properties of van der Waals heterojunctions.


Nanoscale ◽  
2020 ◽  
Vol 12 (28) ◽  
pp. 15364-15370 ◽  
Author(s):  
Wei-Wei Wang ◽  
Chang-Wei Wang ◽  
Jia-Jia Zheng ◽  
Fu-Lin Shang ◽  
Jing-Shuang Dang ◽  
...  

We introduced the distinct catalytic mechanisms of the oriented-external-electric-fields-promoted DA reactions of graphene and hexagonal boron nitride. The different responses to fields can be elucidated from the different charge transfer characters.


Author(s):  
Johan Sjöblom ◽  
Sameer Mhatre ◽  
Sébastien Simon ◽  
Roar Skartlien ◽  
Geir Sørland

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zainab Gholami ◽  
Farhad Khoeini

AbstractThe main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green’s function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.


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