Measurements of the energy band gap and valence band structure ofAgSbTe2

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
V. Jovovic ◽  
J. P. Heremans
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Valence Band ◽  
Energy Band ◽  
Energy Band Gap ◽  
Valence Band Structure

scholarly journals Study of Electronic Properties of GaAs Semiconductor Using Density Functional Theory

2021 ◽  
Vol 4 (2) ◽  
pp. 94
Author(s):  
Fikri Abdi Putra ◽  
Endhah Purwandari ◽  
Bintoro S. Nugroho
Keyword(s):  
Density Functional Theory ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Energy Band ◽  
Density Functional ◽  
Energy Band Structure ◽  
Energy Band Gap ◽  
Functional Theory ◽  
Direct Band

The properties of GaAs material in zinc blende type was calculated using Hiroshima Linear Plane Wave program based on the Density Functional Theory. This calculation aims to determine electronic properties of GaAs material are based on Density of States and energy band structure. This simulation’s results are DOS shows that hybridization of s orbital of Ga with s orbital of As provides covalent properties. The simulation of energy band structure from GaAs material indicates that semiconductor properties of GaAs is direct band gap. The energy band gap results obtained for GaAs is 0.80 eV. The computational result of the energy band gap calculation form HiLAPW has better accuracy and prediction with good agreement within reasonable acceptable errors when compared to some other DFT programs and the results of the experimental obtained.

p+-CdB2 - n-CdF2 and p+-Si - p-CdB2 - n-CdF2 Diffusion Heterostructures

2005 ◽  
Vol 237-240 ◽  
pp. 1060-1065 ◽  
Author(s):  
Nikolai T. Bagraev ◽  
L.E. Klyachkin ◽  
A.M. Malyarenko ◽  
A.S. Shcheulin ◽  
Alexandr I. Ryskin
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Gas Phase ◽  
Valence Band ◽  
Two Dimensional ◽  
Valence Band Structure ◽  
Quantum Size ◽  
Wide Gap ◽  
Junction Plane ◽  
Short Time

The ionic semiconductor CdF2 that is of extraordinary interest for the modern optics and optoelectronics because of the largest band-gap value, 7.8 eV, from all wide-gap semiconductors and of the n-type conductivity caused by doping with the III group elements and subsequent thermal colouring is used to prepare the ultra-shallow p+- n junctions and p+-Si - n-CdF2 heterostructures by the short-time diffusion of boron from the gas phase. The forward branches of the I-V characteristics of the quantum-size p+-n junctions and heterostructures are shown to reveal not only the CdF2 gap value, but also the CdF2 valence band structure as well thereby identifying the ballistic character of the transport of holes. The studies of the I-V characteristics under the voltage applied along the p+-n junction plane demonstrate the metal conductivity of the two-dimensional hole gas, which seems to be evidence of the formation of the p-CdB2 compounds on the n-CdF2 surface in the process of doping with boron.

scholarly journals No Resistive Normal Electrons in Beginning Superconducting States

Mathematics ◽  
2020 ◽  
Vol 8 (9) ◽  
pp. 1512
Author(s):  
Changho Seo ◽  
Seongsoo Cho ◽  
Je Huan Koo
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

We investigate why normal electrons in superconductors have no resistance. Under the same conditions, the band gap is reduced to zero as well, but normal electrons at superconducting states are condensed into this virtual energy band gap.

New Type ofd-Band-Metal Alloys: The Valence-Band Structure of the Metallic Glasses Pd-Zr and Cu-Zr

1979 ◽  
Vol 43 (15) ◽  
pp. 1134-1137 ◽  
Author(s):  
P. Oelhafen ◽  
E. Hauser ◽  
H. -J. Güntherodt ◽  
K. H. Bennemann
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Metallic Glasses ◽  
Metal Alloys ◽  
Valence Band Structure ◽  
New Type

Energy Band Gap Studies of CdS Nanomaterials

2008 ◽  
Vol 3 ◽  
pp. 97-102 ◽  
Author(s):  
Dinu Patidar ◽  
K.S. Rathore ◽  
N.S. Saxena ◽  
Kananbala Sharma ◽  
T.P. Sharma
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Chemical Method ◽  
Optical Absorption Spectroscopy ◽  
Cds Nanoparticles ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Simple Chemical

The CdS nanoparticles of different sizes are synthesized by a simple chemical method. Here, CdS nanoparticles are grown through the reaction of solution of different concentration of CdCl2 with H2S. X-ray diffraction pattern confirms nano nature of CdS and has been used to determine the size of particle. Optical absorption spectroscopy is used to measure the energy band gap of these nanomaterials by using Tauc relation. Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established.

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