Two-dimensional electronic structure of the adsorbate systemN∕Cu(100): Photoelectron spectroscopy and one-step model calculations

2008 ◽  
Vol 77 (16) ◽  
Author(s):  
T. Michalke ◽  
R. Matzdorf ◽  
J. Braun ◽  
A. Postnikov
1981 ◽  
Vol 12 (45) ◽  
Author(s):  
R. GLEITER ◽  
K. GUBERNATOR ◽  
M. ECKERT-MAKSIC ◽  
J. SPANGET-LARSEN ◽  
B. BIANCO ◽  
...  

1981 ◽  
Vol 64 (5) ◽  
pp. 1312-1321 ◽  
Author(s):  
Rolf Gleiter ◽  
Klaus Gubernator ◽  
Mirjana Eckert-Maksi? ◽  
Jens Spanget-Larsen ◽  
Bernard Bianco ◽  
...  

2009 ◽  
Vol 08 (06) ◽  
pp. 595-603
Author(s):  
YUKICHI SHIGETA ◽  
RYOTA NEGISHI ◽  
MASAHIKO SUZUKI

Nanoscale islands on semiconductor are a strong candidate as building block in nanodevices. In the nanoisland, some local deformation is induced by the surface tension, which has a great influence on the electronic property of the nanoislands. To study the electronic structure of two-dimensional (2D) nanoislands of Si and Ge on the Si(111) 7 × 7 surface, we formed nanoislands of the same size and measured with angle resolved ultraviolet photoelectron spectroscopy (ARUPS), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). We found that the nanoisland shows a characteristic fine structure due to some strain. We also calculated a relation between the strain and electronic state based on the density-functional theory. In the calculation, the dangling-bond state at the strained adatom on the nanoisland (SR state) shifts to lower energy, which has liner dependence with the height of the adatoms. The ARUPS spectrum and the STS show characteristic peaks corresponding to the SR state, whose energy depends on the deformation of the adatom. The height of the adatom on the nanoisland estimated from the energy difference is consistent with a result of the STM measurement. The strain of adatoms can be estimated from the electronic structure.


1989 ◽  
Vol 39 (13) ◽  
pp. 9576-9579 ◽  
Author(s):  
Kyeongjae Cho ◽  
S.-J. Oh

2006 ◽  
Vol 132 ◽  
pp. 87-90
Author(s):  
M. El Kazzi ◽  
G. Delhaye ◽  
S. Gaillard ◽  
E. Bergignat ◽  
G. Hollinger

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