Competition between confinement potential fluctuations and band-gap renormalization effects inIn0.53Ga0.47As/In0.525Ga0.235Al0.25Assingle and double quantum wells

2008 ◽  
Vol 77 (16) ◽  
Author(s):  
José Leonil Duarte ◽  
Luiz Carlos Poças ◽  
Edson Laureto ◽  
Ivan Frederico Lupiano Dias ◽  
Élder Mantovani Lopes ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Double Quantum ◽  
Potential Fluctuations ◽  
Confinement Potential

Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells

1995 ◽  
Vol 34 (Part 2, No. 5A) ◽  
pp. L543-L546 ◽  
Author(s):  
Atsushi Tackeuchi ◽  
Albert P. Heberle ◽  
Wolfgang W. Rühle ◽  
Klaus Köhler ◽  
ShunichiMuto
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Double Quantum ◽  
Excitonic Effects ◽  
Asymmetric Double Quantum Wells

Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells

JETP Letters ◽  
1998 ◽  
Vol 67 (8) ◽  
pp. 613-620 ◽  
Author(s):  
V. B. Timofeev ◽  
A. V. Larionov ◽  
A. S. Ioselevich ◽  
J. Zeman ◽  
G. Martinez ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Random Potential ◽  
Double Quantum ◽  
Potential Fluctuations

The effect of potential fluctuations on the optical properties of InGaAs∕InGaAlAs single and coupled double quantum wells

2006 ◽  
Vol 100 (5) ◽  
pp. 053519 ◽  
Author(s):  
L. C. Poças ◽  
J. L. Duarte ◽  
E. M. Lopes ◽  
I. F. L. Dias ◽  
E. Laureto ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Double Quantum ◽  
Potential Fluctuations

Evidence for condensation of excitons in double quantum wells

1996 ◽  
Vol 166 (7) ◽  
pp. 801-803 ◽  
Author(s):  
L.V. Butov ◽  
A. Zrenner ◽  
M. Hagn ◽  
G. Abstreiter ◽  
G. Boehm ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Double Quantum

Magneto-optical spectroscopy of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells

1999 ◽  
Vol 110 (11) ◽  
pp. 633-638
Author(s):  
Joo In Lee ◽  
Annamratu Kasi Viswanath ◽  
Sungkyu Yu ◽  
Eun-Joo Shin ◽  
Kyu-Seok Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Spectroscopy ◽  
Double Quantum

Tunnelling and relaxation in semiconductor double quantum wells

1997 ◽  
Vol 60 (3) ◽  
pp. 345-387 ◽  
Author(s):  
R Ferreira ◽  
G Bastard
Keyword(s):  
Quantum Wells ◽  
Double Quantum

Coherent model for resonant tunneling of electrons in double quantum wells under electric fields

1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Resonant Tunneling ◽  
Double Quantum

scholarly journals Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

2001 ◽  
Vol 692 ◽  
Author(s):  
J. Zhao ◽  
X. D. Zhang ◽  
Z. C. Feng ◽  
J. C. Deng ◽  
P. Jin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Cladding Layer ◽  
Cap Layer ◽  
Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

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