Hydrogen diffusion in acceptor-doped silicon carbide: Implementation of the reaction zone concept

2008 ◽  
Vol 77 (9) ◽  
Author(s):  
M. Sinder ◽  
Z. Burshtein ◽  
J. Pelleg
Keyword(s):  
Silicon Carbide ◽  
Reaction Zone ◽  
Hydrogen Diffusion ◽  
Doped Silicon

Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide

2001 ◽  
Vol 64 (19) ◽  
Author(s):  
M. S. Janson ◽  
A. Hallén ◽  
M. K. Linnarsson ◽  
B. G. Svensson
Keyword(s):  
Silicon Carbide ◽  
Complex Formation ◽  
Hydrogen Diffusion ◽  
Doped Silicon

Finite Temperature Behavior of Carbon Atom Doped Silicon Clusters: Depressed Thermal Stabilities, Co-existing isomers, Reversible Dynamical Pathways and Fragmentation Channels

2021 ◽  
Author(s):  
Krati Joshi ◽  
Ashakiran Maibam ◽  
Sailaja Krishnamurty
Keyword(s):  
Silicon Carbide ◽  
Carbon Atom ◽  
Finite Temperature ◽  
Asymptotic Giant Branch ◽  
Temperature Behavior ◽  
Asymptotic Giant Branch Stars ◽  
Silicon Clusters ◽  
Thermal Stabilities ◽  
Doped Silicon ◽  
Giant Branch Stars

Silicon carbide clusters are significant due to their predominant occurrence in meteoric star dust, particularly in carbon rich asymptotic giant branch stars. Of late, they have also been recognized as...

scholarly journals Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

2019 ◽  
Vol 9 (2) ◽  
pp. 346-354 ◽  
Author(s):  
Andrea Ingenito ◽  
Gizem Nogay ◽  
Josua Stuckelberger ◽  
Philippe Wyss ◽  
Luca Gnocchi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cells ◽  
Front Side ◽  
Si Solar Cells ◽  
Doped Silicon

scholarly journals Superconductivity in carrier-doped silicon carbide

2008 ◽  
Vol 9 (4) ◽  
pp. 044204 ◽  
Author(s):  
Takahiro Muranaka ◽  
Yoshitake Kikuchi ◽  
Taku Yoshizawa ◽  
Naoki Shirakawa ◽  
Jun Akimitsu
Keyword(s):  
Silicon Carbide ◽  
Doped Silicon

scholarly journals Синтез наночастиц карбида кремния методом лазерного пиролиза смеси моносилана и ацетилена

2020 ◽  
Vol 54 (11) ◽  
pp. 1233
Author(s):  
И.А. Ершов ◽  
Л.Д. Исхакова ◽  
В.И. Красовский ◽  
Ф.О. Милович ◽  
С.И. Расмагин ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Reaction Zone ◽  
Phase Reaction ◽  
Synthesis Reaction ◽  
Flow Ratio ◽  
Laser Synthesis ◽  
Gas Phase Reaction ◽  
Silicon Carbide Nanoparticles ◽  
Sic Particles

The conditions of the laser-enhanced synthesis reaction of silicon carbide nanoparticles are determined and the nanoparticles are characterized. The gas-phase reaction of laser synthesis of SiC particles is observed at SiH4/C2H2 flow ratio in the range of 1.6-3.2. The temperature in the reaction zone was ~1400--1500ºC. Silicon carbide nanoparticles ~6 nm in diameter are produced and their composition is studied.

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