Design, Simulation and Analysis of a Dbr Laser Using Vanadium Doped Silicon-Carbide Active Region to Achieve Wide Tuning Range for Telecommunications Application in the 1300nm Window

2021 ◽  
Author(s):  
Patrick Mumba ◽  
Dr. Franklin Manene ◽  
Stephen Musyoki
Keyword(s):  
Silicon Carbide ◽  
Active Region ◽  
Tuning Range ◽  
Wide Tuning Range ◽  
Doped Silicon

scholarly journals A Novel Fast-Locking ADPLL Based on Bisection Method

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1382
Author(s):  
Xiaoying Deng ◽  
Huazhang Li ◽  
Mingcheng Zhu
Keyword(s):  
High Performance ◽  
Tuning Range ◽  
Frequency Control ◽  
Control Word ◽  
Cmos Process ◽  
Bisection Method ◽  
Reference Frequency ◽  
Wide Tuning Range ◽  
Cascade Structure ◽  
And Control

Based on the idea of bisection method, a new structure of All-Digital Phased-Locked Loop (ADPLL) with fast-locking is proposed. The structure and locking method are different from the traditional ADPLLs. The Control Circuit consists of frequency compare module, mode-adjust module and control module, which is responsible for adjusting the frequency control word of digital-controlled-oscillator (DCO) by Bisection method according to the result of the frequency compare between reference clock and restructure clock. With a high frequency cascade structure, the DCO achieves wide tuning range and high resolution. The proposed ADPLL was designed in SMIC 180 nm CMOS process. The measured results show a lock range of 640-to-1920 MHz with a 40 MHz reference frequency. The ADPLL core occupies 0.04 mm2, and the power consumption is 29.48 mW, with a 1.8 V supply. The longest locking time is 23 reference cycles, 575 ns, at 1.92 GHz. When the ADPLL operates at 1.28 GHz–1.6 GHz, the locking time is the shortest, only 9 reference cycles, 225 ns. Compared with the recent high-performance ADPLLs, our design shows advantages of small area, short locking time, and wide tuning range.

Finite Temperature Behavior of Carbon Atom Doped Silicon Clusters: Depressed Thermal Stabilities, Co-existing isomers, Reversible Dynamical Pathways and Fragmentation Channels

2021 ◽  
Author(s):  
Krati Joshi ◽  
Ashakiran Maibam ◽  
Sailaja Krishnamurty
Keyword(s):  
Silicon Carbide ◽  
Carbon Atom ◽  
Finite Temperature ◽  
Asymptotic Giant Branch ◽  
Temperature Behavior ◽  
Asymptotic Giant Branch Stars ◽  
Silicon Clusters ◽  
Thermal Stabilities ◽  
Doped Silicon ◽  
Giant Branch Stars

Silicon carbide clusters are significant due to their predominant occurrence in meteoric star dust, particularly in carbon rich asymptotic giant branch stars. Of late, they have also been recognized as...

Modelling and analysis of a hybrid CS-CMOS ring VCO with wide tuning range

2020 ◽  
Vol 98 ◽  
pp. 104752 ◽  
Author(s):  
M. Maiti ◽  
A. Majumder ◽  
S. Chakrabartty ◽  
H. Song ◽  
B.K. Bhattacharyya
Keyword(s):  
Tuning Range ◽  
Wide Tuning Range

Wide-tuning range Si bipolar VCOs based on three-dimensional MMIC technology

1997 ◽  
Vol 45 (12) ◽  
pp. 2436-2443 ◽  
Author(s):  
K. Kamogawa ◽  
K. Nishikawa ◽  
C. Yamaguchi ◽  
M. Hirano ◽  
I. Toyoda ◽  
...  
Keyword(s):  
Tuning Range ◽  
Three Dimensional ◽  
Wide Tuning Range

scholarly journals Reconfigurable Parallel Coupled Band Notch Resonator With Wide Tuning Range

2014 ◽  
Vol 61 (11) ◽  
pp. 6316-6326 ◽  
Author(s):  
Zhengpeng Wang ◽  
James R. Kelly ◽  
Peter S. Hall ◽  
Alejandro L. Borja ◽  
Peter Gardner
Keyword(s):  
Tuning Range ◽  
Wide Tuning Range
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