Bi isoelectronic impurities in GaAs

2008 ◽  
Vol 77 (8) ◽  
Author(s):  
S. Francoeur ◽  
S. Tixier ◽  
E. Young ◽  
T. Tiedje ◽  
A. Mascarenhas
Keyword(s):  
Isoelectronic Impurities

Isoelectronic impurities in II-VI semiconductors: ZnTe doped with Ca, Sr, and Ba

1999 ◽  
Vol 59 (20) ◽  
pp. 12911-12916 ◽  
Author(s):  
M. J. Seong ◽  
I. Miotkowski ◽  
A. K. Ramdas
Keyword(s):  
Isoelectronic Impurities

Charge oscillations caused by isoelectronic impurities

1975 ◽  
Vol 72 (1) ◽  
pp. K5-K8
Author(s):  
R. Ferrer ◽  
M. Kiwi ◽  
M. J. Zuckermann
Keyword(s):  
Isoelectronic Impurities

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

2000 ◽  
Vol 76 (23) ◽  
pp. 3439-3441 ◽  
Author(s):  
P. J. Klar ◽  
H. Grüning ◽  
W. Heimbrodt ◽  
J. Koch ◽  
F. Höhnsdorf ◽  
...  
Keyword(s):  
Isoelectronic Impurities

Luminescence due to isoelectronic impurities in CuCl

1971 ◽  
Vol 4 (3) ◽  
pp. 249-260 ◽  
Author(s):  
Y. Takubo ◽  
T. Koda ◽  
T. Mitani
Keyword(s):  
Isoelectronic Impurities

Isoelectronic impurities in semiconductors

1967 ◽  
Vol 5 (9) ◽  
pp. xi-xii
Author(s):  
R.A. Faulkner ◽  
J.J. Hopfield
Keyword(s):  
Impurities In Semiconductors ◽  
Isoelectronic Impurities

Electronic Structure of Mercury, Gold and Platinum Impurities in Silicon

1985 ◽  
Vol 46 ◽  
Author(s):  
Jose R. Leite ◽  
Jose L.A. Alves
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Valence Band ◽  
Electronic Structures ◽  
Cluster Model ◽  
Tetrahedral Site ◽  
Shallow Donor ◽  
Molecular Cluster ◽  
Vacancy Model ◽  
Isoelectronic Impurities

AbstractThe electronic structures of substitutional and tetrahedral-site interstitial Hg+, Auo and Pt− isoelectronic impurities in silicon have been analysed. The centers are theoretically described by the Watson-sphereterminated molecular cluster model within the framework of the multiplescattering Xa formalism. At the substitutional sites the centers are related to the “vacancy” model recently proposed to describe the properties of the elements at the end of the transition-metal series. At the interstitialsites the impurities introduce a hyperdeep s-like level close to the bottom of the valence band and, in agreement with experiments, do not show shallow donor activities. For all the analysed centers the d-states remain fully occupied below, or within, the valence band.

Sign in / Sign up

Export Citation Format

Share Document