Inelastic light scattering by longitudinal acoustic phonons in thin silicon layers: From membranes to silicon-on-insulator structures

2008 ◽  
Vol 77 (4) ◽  
Author(s):  
J. Groenen ◽  
F. Poinsotte ◽  
A. Zwick ◽  
C. M. Sotomayor Torres ◽  
M. Prunnila ◽  
...  
Keyword(s):  
Light Scattering ◽  
Silicon On Insulator ◽  
Acoustic Phonons ◽  
Longitudinal Acoustic ◽  
Inelastic Light Scattering ◽  
Thin Silicon

Scattering of longitudinal acoustic phonons in thin silicon membranes

2017 ◽  
Author(s):  
Dhruv Gelda ◽  
Marc G. Ghossoub ◽  
Krishna V. Valavala ◽  
Manjunath C. Rajagopal ◽  
Sanjiv Sinha
Keyword(s):  
Acoustic Phonons ◽  
Longitudinal Acoustic ◽  
Thin Silicon ◽  
Silicon Membranes

Theory of light scattering by longitudinal-acoustic phonons in superlattices

1988 ◽  
Vol 37 (8) ◽  
pp. 4086-4098 ◽  
Author(s):  
Jianjun He ◽  
Bahram Djafari-Rouhani ◽  
Jacques Sapriel
Keyword(s):  
Light Scattering ◽  
Acoustic Phonons ◽  
Longitudinal Acoustic

Propagation of Acoustic Phonons in Amorphous Superlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
P. V. Santos ◽  
L. Ley ◽  
J. Mebert ◽  
J. Koblinger
Keyword(s):  
Raman Spectrum ◽  
Light Scattering ◽  
Dispersion Relation ◽  
Brillouin Zone ◽  
Phonon Dispersion ◽  
Transmission Spectra ◽  
Acoustic Phonons ◽  
Longitudinal Acoustic ◽  
Energy Gaps

ABSTRACTWe have investigated the Raman and the phonon transmission spectra of a-Si:H/a-SiNx:H super lattices. At low wavenumbers, the Raman spectrum shows sharp peaks corresponding to the excitation of modes from the folded branches of the dispersion relation for longitudinal acoustic phonons propagating perpendicular to the layers. Energy gaps in the folded phonon dispersion occur at the center and at the boundary of the mini-Brillouin zone due to the differences in the acoustic impedances of the layers. The size of the lowest gaps was determined by light scattering. The phonon transmission spectra show transmission minima that we attribute to the frequency gaps in the dispersion of transversal acoustic phonons. The position and width of these minima are compared with the dispersion obtained from the Raman data.

Study on light scattering by longitudinal-acoustic phonons in superlattices

1992 ◽  
Vol 12 (1) ◽  
pp. 73-76 ◽  
Author(s):  
Y. Jin ◽  
S.L. Zhang ◽  
Y.L. Fan ◽  
M.R. Yu ◽  
X. Wang ◽  
...  
Keyword(s):  
Light Scattering ◽  
Acoustic Phonons ◽  
Longitudinal Acoustic

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

2017 ◽  
Vol 56 (10) ◽  
pp. 105503
Author(s):  
Kiichi Furukawa ◽  
Akinobu Teramoto ◽  
Rihito Kuroda ◽  
Tomoyuki Suwa ◽  
Keiichi Hashimoto ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Flat Surface ◽  
Silicon On Insulator ◽  
Thin Silicon ◽  
Ion Implanted

An unified approach to inelastic light scattering in Keldysh–Schwinger functional integral formalism

2015 ◽  
Vol 29 (07) ◽  
pp. 1550040 ◽  
Author(s):  
Hyun Cheol Lee
Keyword(s):  
Light Scattering ◽  
Cross Sections ◽  
Golden Rule ◽  
Functional Integral ◽  
Integral Formalism ◽  
Inelastic Light Scattering ◽  
Scattering Geometry ◽  
The One ◽  
Resonant Part ◽  
Functional Integral Formalism

We propose a theoretical framework which can treat the nonresonant and the resonant inelastic light scattering on an equal footing in the form of correlation function, employing Keldysh–Schwinger functional integral formalism. The interference between the nonresonant and the resonant process can be also incorporated in this framework. This approach is applied to the magnetic Raman scattering of two-dimensional antiferromagnetic insulators. The entire set of the scattering cross-sections are obtained at finite temperature, the result for the resonant part agrees with the one obtained by the conventional Fermi golden rule at zero temperature. The interference contribution is shown to be very sensitive to the scattering geometry and the band structure.

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