Quantum transport properties of carbon nanotube field-effect transistors with electron-phonon coupling

2007 ◽  
Vol 76 (20) ◽  
Author(s):  
Hiroyuki Ishii ◽  
Nobuhiko Kobayashi ◽  
Kenji Hirose
Keyword(s):  
Carbon Nanotube ◽  
Transport Properties ◽  
Quantum Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

scholarly journals ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBES

NANO ◽  
2006 ◽  
Vol 01 (01) ◽  
pp. 1-13 ◽  
Author(s):  
HONGJIE DAI ◽  
ALI JAVEY ◽  
ERIC POP ◽  
DAVID MANN ◽  
WOONG KIM ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Electrical Transport Properties

This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the strong covalent carbon–carbon bonding configuration, carbon nanotubes are highly promising as building blocks for future electronics. They are found to perform favorably in terms of ON-state current density as compared to the existing silicon technology, owing to their superb electron transport properties and compatibility with high-κ gate dielectrics. Future directions and challenges for carbon nanotube-based electronics are also discussed.

Noise spectroscopy of transport properties in carbon nanotube field-effect transistors

Carbon ◽  
2013 ◽  
Vol 53 ◽  
pp. 252-259 ◽  
Author(s):  
V.A. Sydoruk ◽  
M.V. Petrychuk ◽  
A. Ural ◽  
G. Bosman ◽  
A. Offenhäusser ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Noise Spectroscopy

A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

2012 ◽  
Vol 26 (29) ◽  
pp. 1250155 ◽  
Author(s):  
REZA YOUSEFI ◽  
SEYYED SALEH GHOREISHI
Keyword(s):  
Carbon Nanotube ◽  
Electrical Properties ◽  
Power Consumption ◽  
Low Power ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Study ◽  
Uniaxial Strain ◽  
Band To Band Tunneling

In this paper, the transport properties of the band-to-band-tunneling carbon nanotube field-effect transistors (BTBT-CNTFETs) under uniaxial strain are studied, with the nonequilibrium Green's function (NEGF) formalism. The effects of the uniaxial strain on the electrical properties, such as the ON current (I ON ), OFF current (I OFF ), I ON /I OFF ratio, subthreshold swing and intrinsic delay are evaluated. It was observed that the uniaxial strain has strong effects on the transport properties of these transistors. The results show that appropriate uniaxial strain, although degrades the ON current and the intrinsic delay, it also decreases the power consumption of the BTBT-CNTFETs and as a result can be used for low-power applications.

PROBING SINGLE AND BILAYER GRAPHENE FIELD EFFECT TRANSISTORS BY RAMAN SPECTROSCOPY

2011 ◽  
Vol 25 (08) ◽  
pp. 511-535 ◽  
Author(s):  
A. DAS ◽  
B. CHAKRABORTY ◽  
A. K. SOOD
Keyword(s):  
Raman Spectroscopy ◽  
Field Effect ◽  
Density Functional ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Bilayer Graphene ◽  
Phonon Coupling ◽  
Electronic Band ◽  
Electron Phonon Coupling ◽  
Phonon Renormalization

This article is a review of our work related to Raman studies of single layer and bilayer graphenes as a function Fermi level shift achieved by electrochemically top gating a field effect transistor. Combining the transport and in situ Raman studies of the field effect devices, a quantitative understanding is obtained of the phonon renormalization due to doping of graphene. Results are discussed in the light of time dependent perturbation theory, with electron phonon coupling parameter as an input from the density functional theory. It is seen that phonons near Γ and K points of the Brillouin zone are renormalized very differently by doping. Further, Γ-phonon renormalization is different in bilayer graphene as compared to single layer, originating from their different electronic band structures near the zone boundary K-point. Thus Raman spectroscopy is not only a powerful probe to characterize the number of layers and their quality in a graphene sample, but also to quantitatively evaluate electron phonon coupling required to understand the performance of graphene devices.

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