scholarly journals Anomalous properties of the band-edge states in large two-dimensional photonic quasicrystals

2007 ◽  
Vol 76 (16) ◽  
Author(s):  
Yun Lai ◽  
Zhao-Qing Zhang ◽  
Chi-Hou Chan ◽  
Leung Tsang
Keyword(s):  
Band Edge ◽  
Two Dimensional ◽  
Edge States ◽  
Photonic Quasicrystals

scholarly journals Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Dan Wang ◽  
Dong Han ◽  
Damien West ◽  
Nian-Ke Chen ◽  
Sheng-Yi Xie ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Band Edge ◽  
Two Dimensional ◽  
Edge States

scholarly journals Multi-shaped strain soliton networks and moiré-potential-modulated band edge states in twisted bilayer SiC

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24366-24373
Author(s):  
Dawei Kang ◽  
Zheng-Wei Zuo ◽  
Zhaowu Wang ◽  
Weiwei Ju
Keyword(s):  
Twist Angle ◽  
Layered Materials ◽  
Degree Of Freedom ◽  
Band Edge ◽  
Two Dimensional ◽  
Edge States

Tuning the interlayer twist angle provides a new degree of freedom to exploit the potentially excellent properties of two dimensional layered materials.

Experimental demonstration of directional acoustic radiation based on two-dimensional phononic crystal band edge states

2007 ◽  
Vol 90 (8) ◽  
pp. 083509 ◽  
Author(s):  
Manzhu Ke ◽  
Zhengyou Liu ◽  
Pei Pang ◽  
Chunyin Qiu ◽  
Degang Zhao ◽  
...  
Keyword(s):  
Acoustic Radiation ◽  
Phononic Crystal ◽  
Band Edge ◽  
Two Dimensional ◽  
Edge States ◽  
Experimental Demonstration

A design rule for two-dimensional van der Waals heterostructures with unconventional band alignments

2020 ◽  
Vol 22 (5) ◽  
pp. 3037-3047 ◽  
Author(s):  
Yuan Si ◽  
Hong-Yu Wu ◽  
Ji-Chun Lian ◽  
Wei-Qing Huang ◽  
Wang-Yu Hu ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Interlayer Coupling ◽  
Band Alignment ◽  
Band Edge ◽  
Design Rule ◽  
Two Dimensional ◽  
Edge States ◽  
Van Der Waals Heterostructures ◽  
Band Alignments

A feasible rule to design unconventional band alignment by inducing the hybridization of band-edge states via interlayer coupling.

Theoretical realization of two-dimensional Dirac/Weyl line-node and traversing edge states in penta-X2Y monolayers

2021 ◽  
Vol 23 ◽  
pp. 101057
Author(s):  
Lirong Wang ◽  
Lei Jin ◽  
Guodong Liu ◽  
Ying Liu ◽  
Xuefang Dai ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Edge States ◽  
Line Node

scholarly journals Schwarzian quantum mechanics as a Drinfeld-Sokolov reduction of BF theory

2020 ◽  
Vol 2020 (12) ◽  
Author(s):  
Fridrich Valach ◽  
Donald R. Youmans
Keyword(s):  
Quantum Mechanics ◽  
Partition Function ◽  
Gauge Group ◽  
Path Integral ◽  
Coadjoint Orbits ◽  
Two Dimensional ◽  
Edge States ◽  
Class Constraint ◽  
Action Functional ◽  
Bf Theory

Abstract We give an interpretation of the holographic correspondence between two-dimensional BF theory on the punctured disk with gauge group PSL(2, ℝ) and Schwarzian quantum mechanics in terms of a Drinfeld-Sokolov reduction. The latter, in turn, is equivalent to the presence of certain edge states imposing a first class constraint on the model. The constrained path integral localizes over exceptional Virasoro coadjoint orbits. The reduced theory is governed by the Schwarzian action functional generating a Hamiltonian S1-action on the orbits. The partition function is given by a sum over topological sectors (corresponding to the exceptional orbits), each of which is computed by a formal Duistermaat-Heckman integral.

Band-edge states in short-period (GaAs)m/(AlAs)nsuperlattices

1989 ◽  
Vol 39 (8) ◽  
pp. 5165-5174 ◽  
Author(s):  
Sudha Gopalan ◽  
N. E. Christensen ◽  
M. Cardona
Keyword(s):  
Band Edge ◽  
Edge States ◽  
Short Period

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

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