scholarly journals Crossover from impurity to valence band in diluted magnetic semiconductors: Role of Coulomb attraction by acceptors

2007 ◽  
Vol 76 (8) ◽  
Author(s):  
F. Popescu ◽  
C. Şen ◽  
E. Dagotto ◽  
A. Moreo
Keyword(s):  
Valence Band ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic ◽  
Coulomb Attraction

Electronic structure of the diluted magnetic semiconductors Pb1−xSnxTe:Yb

2004 ◽  
Vol 825 ◽  
Author(s):  
Evgenii Skipetrov ◽  
Elena Zvereva ◽  
Olga Volkova ◽  
Alexander Golubev ◽  
Vasiliy Slyn'ko
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Valence Band ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Hole Concentration ◽  
Energy Position ◽  
Carrier Energy ◽  
Order Of Magnitude ◽  
Diluted Magnetic

AbstractThe galvanomagnetic effects in the new diluted magnetic semiconductors Pb1−xSnxTe:Yb were studied to determine the parameters of the electronic structure and to elucidate its influence on the magnetic properties. It was found that the temperature dependencies of the resistivity ρ and the Hall coefficient RH have a “metallic” character, however the RH changes in anomalous manner: its value increases more than by order of magnitude and then passes through maximum with increasing the temperature. Upon an increase of the ytterbium concentration the hole concentration decreases by more than order of magnitude. The results were explained assuming a formation of deep ytterbium-induced defect level in the valence band of the alloys, which moves up to its top with increasing the ytterbium concentration and pins the Fermi level within the valence band. The energy position of the Fermi level was calculated in the frame of two-band dispersion law and used to determine the position of Yb level in the alloys. The diagram of the charge carrier energy spectrum under varying the alloy composition was built.

Valence Band Crystal Field Splitting of Hexagonal Diluted Magnetic Semiconductors

1994 ◽  
Vol 181 (2) ◽  
pp. 439-445 ◽  
Author(s):  
A. Twardowski ◽  
K. Chern-Yu ◽  
F. R. Chen ◽  
S. S. Kuo ◽  
C. S. Ro ◽  
...  
Keyword(s):  
Valence Band ◽  
Crystal Field ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Crystal Field Splitting ◽  
Field Splitting ◽  
Diluted Magnetic

Spin-Texture in Acceptor-Bound Magnetic Polarons

1986 ◽  
Vol 89 ◽  
Author(s):  
Eric D. Isaacs ◽  
Peter A. Wolff
Keyword(s):  
Neutron Scattering ◽  
Valence Band ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Polaron ◽  
Spin Orbit ◽  
Bound Magnetic Polaron ◽  
Magnetic Polarons ◽  
Diluted Magnetic ◽  
Spin Texture

AbstractWe outline a theory of the acceptor-bound magnetic polaron in cubic diluted magnetic semiconductors that exhibits a nonuniform magnetization. Calculations show that the manganese spins have an overall z-alignment, but are canted in an azimuthally symmetric way from that direction. This is new phenomenon we call BMP spin-texture. Spin-texture results from valence band degeneracy, and the important spin-orbit effects associated with it. The possibility of studying BMP spin-texture via neutron scattering is discussed.

Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

2015 ◽  
Vol 26 (4) ◽  
pp. 2466-2470 ◽  
Author(s):  
Hongbo Liu ◽  
Yang Liu ◽  
Lili Yang ◽  
Zhenguo Chen ◽  
Huilian Liu ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Doped Zno ◽  
Diluted Magnetic

scholarly journals Correlated Doping in Semiconductors: the Role of Donors in III-V Diluted Magnetic Semiconductors

2002 ◽  
Vol 102 (4-5) ◽  
pp. 673-678 ◽  
Author(s):  
J. Mašek ◽  
I. Turek ◽  
V. Drchal ◽  
J. Kudrnovský ◽  
F. Máca
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic
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