The role of anomalous Hall effect in diluted magnetic semiconductors and oxides

2010 ◽  
Vol 96 (24) ◽  
pp. 242507 ◽  
Author(s):  
H. S. Hsu ◽  
C. P. Lin ◽  
S. J. Sun ◽  
H. Chou
Keyword(s):  
Hall Effect ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Anomalous Hall Effect ◽  
Diluted Magnetic

Structural and Magneto-transport Properties of Cr-doped In2O3 Diluted Magnetic Semiconductors

2008 ◽  
Vol 1119 ◽  
Author(s):  
N.B. Ukah ◽  
R K Gupta ◽  
K Ghosh ◽  
P K Kahol ◽  
R Giedd
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Electrical Transport ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Growth Pressure ◽  
Diluted Magnetic

AbstractWe report the experimental study of the structural and magnetotransport properties of chromium-doped indium oxide (In2O3:Cr) thin films using x-ray diffractometer, and by measuring the resistivity and Hall effect as a function of temperature in various magnetic fields. The In2O3:Cr diluted magnetic semiconductor thin films were grown under different partial oxygen pressures (Po2) on sapphire substrates using pulsed laser deposition (PLD) technique. Observed expansions in lattice parameter and crystal size in these films with increase in oxygen growth pressure are traceable to the reduction in oxygen vacancies. A redshift of the absorption edges of the samples with increase in oxygen growth pressure is attributed to the significant improvement in crystallinity. The exchange interaction between the electron spins in the conduction band and the spins of the Cr 3d electrons was evident in the anomalous Hall effect (AHE), which persisted up to 300 K. An analysis of the dc electrical transport in the films was carried out using hopping conduction and ionized impurity scattering models.

Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors

2015 ◽  
Vol 26 (4) ◽  
pp. 2466-2470 ◽  
Author(s):  
Hongbo Liu ◽  
Yang Liu ◽  
Lili Yang ◽  
Zhenguo Chen ◽  
Huilian Liu ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Doped Zno ◽  
Diluted Magnetic

scholarly journals Correlated Doping in Semiconductors: the Role of Donors in III-V Diluted Magnetic Semiconductors

2002 ◽  
Vol 102 (4-5) ◽  
pp. 673-678 ◽  
Author(s):  
J. Mašek ◽  
I. Turek ◽  
V. Drchal ◽  
J. Kudrnovský ◽  
F. Máca
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic

Application of Positron Beams to the Investigation of Memristive Materials and Diluted Magnetic Semiconductors

2012 ◽  
Vol 331 ◽  
pp. 235-251
Author(s):  
Kay Potzger ◽  
Maciej Oskar Liedke
Keyword(s):  
Resistive Switching ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
General Introduction ◽  
Spin Electronics ◽  
Positron Beams ◽  
Diluted Magnetic ◽  
Expected Benefits ◽  
Ongoing Project

After a general introduction to the field of resistive switching and spin electronics and the role of defects therein, recent investigations on the above mentioned topics including positron beams are reviewed. An ongoing project at the Helmholtz Centre Dresden-Rossendorf to further extend such investigations is briefly outlined and expected benefits are mentioned.

The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors

2010 ◽  
Vol 96 (21) ◽  
pp. 211905 ◽  
Author(s):  
Tongfei Shi ◽  
Zhenguo Xiao ◽  
Zhijun Yin ◽  
Xinhua Li ◽  
Yuqi Wang ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Role Of Zn
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