scholarly journals Local zero-bias anomaly in tunneling spectra of a transition-metal oxide thin film

2007 ◽  
Vol 75 (20) ◽  
Author(s):  
Emile D. L. Rienks ◽  
Niklas Nilius ◽  
Livia Giordano ◽  
Jacek Goniakowski ◽  
Gianfranco Pacchioni ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
Oxide Thin Film ◽  
Zero Bias ◽  
Metal Oxide Thin Film ◽  
Zero Bias Anomaly

scholarly journals Enhanced oxygen evolution reaction by stacking single-crystalline freestanding SrRuO3

2021 ◽  
Author(s):  
Qixiang Wang ◽  
Huan Liu ◽  
Bin He ◽  
Ji Qi ◽  
Di Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Metal Oxide ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Transition Metal Oxide ◽  
Oxide Thin Film ◽  
Strain Condition ◽  
Single Crystalline ◽  
Metal Oxide Thin Film

Abstract Transition metal oxide thin film has recently become an attractive platform for enhanced catalytic activity and to perceive the fundamental functions of d electron structure and charge transfer processes. Owing to the long-range lattice ordering and accurate stoichiometry, the single-crystalline transition metal oxide thin film enables the mechanism discussion of electrochemistry down to the atomic level. However, it is technically unviable in the fabrication of transition metal oxide thin film with a substantial surface area and strain condition. Here we report the oxygen evolution reaction enhancement by a stack of multilayer SrRuO3 featured with single-crystallinity, flexibility, and stackability, which was achieved from the rigid heterostructure via a water-dissolution of Sr3Al2O6 sacrifice interlayers. The controllable stack of multilayer SrRuO3 and the emergent high-spin state t2g(3↑)eg(1↑) of Ru efficiently enhances the oxygen evolution reaction activity. Our study provides an approach for fine manipulation of single-crystalline freestanding transition metal oxide morphologically, and an efficient strategy aiming at the extreme enhancement of the electrochemically active surface area and strain condition.

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film
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