scholarly journals Charge and spin transport in spin valves with anisotropic spin relaxation

2007 ◽  
Vol 75 (7) ◽  
Author(s):  
H. Saarikoski ◽  
W. Wetzels ◽  
G. E. W. Bauer
Keyword(s):  
Spin Relaxation ◽  
Spin Transport ◽  
Spin Valves

scholarly journals Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature

Small ◽  
2014 ◽  
pp. n/a-n/a ◽  
Author(s):  
Saumil Bandyopadhyay ◽  
Md. Iftekhar Hossain ◽  
Hasnain Ahmad ◽  
Jayasimha Atulasimha ◽  
Supriyo Bandyopadhyay
Keyword(s):  
Spin Relaxation ◽  
Room Temperature ◽  
Spin Transport ◽  
Insb Nanowires ◽  
Coherent Spin

Spin relaxation through lateral spin transport in heavily doped n -type silicon

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
M. Ishikawa ◽  
T. Oka ◽  
Y. Fujita ◽  
H. Sugiyama ◽  
Y. Saito ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Spin Transport ◽  
Type Silicon ◽  
Heavily Doped

scholarly journals Investigation of the thermal tolerance of silicon-based lateral spin valves

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
N. Yamashita ◽  
S. Lee ◽  
R. Ohshima ◽  
E. Shigematsu ◽  
H. Koike ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Thermal Tolerance ◽  
Spin Transport ◽  
Layer Structure ◽  
Spin Injection ◽  
Spin Valves ◽  
Thermally Stable ◽  
Plane Direction ◽  
Silicon Based ◽  
Spin Devices

AbstractImprovement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.

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