Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions

2006 ◽  
Vol 74 (8) ◽  
Author(s):  
M. H. Xie ◽  
M. Gong ◽  
E. K. Y. Pang ◽  
H. S. Wu ◽  
S. Y. Tong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Step ◽  
Step Bunching ◽  
Triangular Island

scholarly journals Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

2000 ◽  
Vol 61 (15) ◽  
pp. 9983-9985 ◽  
Author(s):  
M. H. Xie ◽  
S. H. Cheung ◽  
L. X. Zheng ◽  
Y. F. Ng ◽  
Huasheng Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Bunching

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

2003 ◽  
Vol 12 (2) ◽  
pp. 218-221 ◽  
Author(s):  
Zhou Da-Yong ◽  
Lan Qing ◽  
Kong Yun-Chuan ◽  
Miao Zhen-Hua ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Step Bunching ◽  
Wire Arrays

Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

2001 ◽  
Vol 227-228 ◽  
pp. 46-50 ◽  
Author(s):  
S Martini ◽  
A.A Quivy ◽  
D Ugarte ◽  
C Lange ◽  
W Richter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
Step Bunching

Terracing and step bunching in interfaces of molecular beam epitaxy‐grown (Al)GaAs multilayers

1993 ◽  
Vol 62 (17) ◽  
pp. 2105-2107 ◽  
Author(s):  
O. Albrektsen ◽  
H. P. Meier ◽  
D. J. Arent ◽  
H. W. M. Salemink
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Bunching

High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4454-4457 ◽  
Author(s):  
Kulandaivel Jeganathan ◽  
Xu-Qiang Shen ◽  
Toshihide Ide ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Double Step ◽  
Sapphire Substrates ◽  
Aln Buffer

Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4038-4039 ◽  
Author(s):  
Yusui Nakamura ◽  
Ichiro Tanaka ◽  
Norishige Takeuchi ◽  
Shyun Koshiba ◽  
Hiroshi Noge ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Smoothness ◽  
Step Bunching

Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates

1997 ◽  
Vol 71 (20) ◽  
pp. 2961-2963 ◽  
Author(s):  
N. Bécourt ◽  
F. Peiró ◽  
A. Cornet ◽  
J. R. Morante ◽  
P. Gorostiza ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Defects ◽  
Surface Step ◽  
Step Bunching ◽  
Inp Substrates

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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