Terracing and step bunching in interfaces of molecular beam epitaxy‐grown (Al)GaAs multilayers

1993 ◽  
Vol 62 (17) ◽  
pp. 2105-2107 ◽  
Author(s):  
O. Albrektsen ◽  
H. P. Meier ◽  
D. J. Arent ◽  
H. W. M. Salemink
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Bunching

scholarly journals Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

2000 ◽  
Vol 61 (15) ◽  
pp. 9983-9985 ◽  
Author(s):  
M. H. Xie ◽  
S. H. Cheung ◽  
L. X. Zheng ◽  
Y. F. Ng ◽  
Huasheng Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Bunching

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

2003 ◽  
Vol 12 (2) ◽  
pp. 218-221 ◽  
Author(s):  
Zhou Da-Yong ◽  
Lan Qing ◽  
Kong Yun-Chuan ◽  
Miao Zhen-Hua ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Step Bunching ◽  
Wire Arrays

Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

2001 ◽  
Vol 227-228 ◽  
pp. 46-50 ◽  
Author(s):  
S Martini ◽  
A.A Quivy ◽  
D Ugarte ◽  
C Lange ◽  
W Richter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
Step Bunching

Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4038-4039 ◽  
Author(s):  
Yusui Nakamura ◽  
Ichiro Tanaka ◽  
Norishige Takeuchi ◽  
Shyun Koshiba ◽  
Hiroshi Noge ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Smoothness ◽  
Step Bunching

Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates

1997 ◽  
Vol 71 (20) ◽  
pp. 2961-2963 ◽  
Author(s):  
N. Bécourt ◽  
F. Peiró ◽  
A. Cornet ◽  
J. R. Morante ◽  
P. Gorostiza ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Defects ◽  
Surface Step ◽  
Step Bunching ◽  
Inp Substrates

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Sign in / Sign up

Export Citation Format

Share Document