Effect of electromechanical coupling on the pressure coefficient of light emission in group-III nitride quantum wells and superlattices

2006 ◽  
Vol 74 (3) ◽  
Author(s):  
S. P. Łepkowski ◽  
J. A. Majewski
Keyword(s):  
Quantum Wells ◽  
Electromechanical Coupling ◽  
Light Emission ◽  
Pressure Coefficient ◽  
Group Iii ◽  
Group Iii Nitride

Exciton localization in group-III nitride quantum wells

1999 ◽  
Vol 59 (15) ◽  
pp. 9783-9786 ◽  
Author(s):  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Exciton Localization ◽  
Group Iii Nitride

6.4.3 Group III–nitride quantum wells

2013 ◽  
pp. 120-122
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Group Iii Nitride

Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys

2003 ◽  
Vol 798 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
E. E. Haller ◽  
...  
Keyword(s):  
Pressure Dependence ◽  
Pressure Coefficient ◽  
Accurate Method ◽  
Group Iii Nitrides ◽  
Localized States ◽  
Optical Transitions ◽  
Group Iii ◽  
Pressure Coefficients ◽  
Nitride Alloys ◽  
Group Iii Nitride

ABSTRACTThe hydrostatic pressure dependence of the optical transitions in InN, In-rich In1-xGaxN (0 < x < 0.5) and In1-xAlxN (x = 0.25) alloys is studied using diamond anvil cells. The absorption edges and the photoluminescence peaks shift to higher energy with pressure. The pressure coefficient of InN is determined to be 3.0±0.1 meV/kbar. Together with previous experimental results, our data suggest that the pressure coefficients of group-III nitride alloys have only a weak dependence on the alloy composition. Photoluminescence gives much smaller pressure coefficients, which is attributed to emission involving highly localized states. This indicates that photoluminescence might not be an accurate method to study the pressure dependence of the fundamental bandgaps of group III-nitrides.

Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

2005 ◽  
Vol 202 (4) ◽  
pp. 642-646 ◽  
Author(s):  
S. Anceau ◽  
P. Lefebvre ◽  
T. Suski ◽  
L. Konczewicz ◽  
H. Hirayama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Confinement Effects ◽  
Group Iii ◽  
Group Iii Nitride

Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

2001 ◽  
Vol 82 (1-3) ◽  
pp. 221-223 ◽  
Author(s):  
A Morel ◽  
P Lefebvre ◽  
T Taliercio ◽  
M Gallart ◽  
B Gil ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Binding Energies ◽  
Group Iii ◽  
Group Iii Nitride
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